UF3N30G-TN3-R [UTC]
3A, 300V N-CHANNEL POWER MOSFET; 3A ， 300V N沟道功率MOSFET
| 型号： | UF3N30G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 3A, 300V N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF3N30
Preliminary
Power MOSFET
3A, 300V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF3N30 is an N-channel enhancement mode Power
MOSFET using UTC’ s advanced technology to provide customers
with a minimum on-state resistance, low gate charge and superior
switching performance.
FEATURES
* RDS(ON)<2Ω @ VGS=10V, ID=3A
* High switching speed
* Typically 4nC low gate charge
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
UF3N30G-TM3-R
UF3N30G- TN3-R
1
2
3
UF3N30L-TM3-R
UF3N30L-TN3-R
TO-251
TO-252
G
G
D
S
S
Tape Reel
Tape Reel
D
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-826.a
UF3N30
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
300
±20
V
Continuous
Pulsed
3
A
Continuous Drain Current
IDM
12
A
Avalanche Energy
EAS
52
mJ
W
Power Dissipation
PD
50
Junction Temperature
Storage Temperature Range
TJ
+150
-55~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
ID=250µA, VGS=0V
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
300
V
VDS=300V
1
µA
Forward
Reverse
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100 nA
-100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
ID=250µA
2
4
2
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS=10V, ID=3A
ꢀ
CISS
COSS
CRSS
200
90
pF
pF
pF
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
30
QG
QGS
QGD
tD(ON)
tR
4
0.64
1.6
10
nC
nC
nC
ns
ns
ns
ns
V
V
DD=50V, ID=1.3A, IG=100µA,
GS=10V
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
VDD=30V, ID=0.5A, RG=25ꢀ,
GS=0~10V
50
V
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
30
40
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
3
A
A
V
ISM
VSD
12
1.3
IS=0.85A
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QW-R502-826.a
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UF3N30
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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