UF460G-T3P-T [UTC]

21A, 500V N-CHANNEL POWER MOSFET; 21A , 500V N沟道功率MOSFET
UF460G-T3P-T
型号: UF460G-T3P-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

21A, 500V N-CHANNEL POWER MOSFET
21A , 500V N沟道功率MOSFET

文件: 总4页 (文件大小:215K)
中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UF460  
Power MOSFET  
21A, 500V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UF460 uses advanced UTC technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch, in PWM  
applications, motor controls, inverters, choppers, audio amplifiers  
and high energy pulse circuits.  
„
FEATURES  
* RDS(ON) = 310m@VGS = 10V, ID =21A  
* Ultra low gate charge (max. 190nC )  
* Low reverse transfer capacitance ( CRSS = typical 250pF )  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Lead Free  
Pin Assignment  
Package  
Packing  
Halogen Free  
UF460G-T3P-T  
UF460G-T47-T  
1
2
D
D
3
S
S
UF460L-T3P-T  
TO-3P  
G
G
Tube  
Tube  
UF460L-T47-T  
TO-247  
www.unisonic.com.tw  
1 of 7  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-186.C  
UF460  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VGSS  
ID  
RATINGS  
UNIT  
Gate-Source Voltage  
±20  
21  
V
A
A
A
Continuous (VGS=0V)  
Pulsed (Note 2)  
Continuous Drain Current  
Pulsed Drain Current  
IDM  
84  
Avalanche Current (Note2)  
IAR  
21  
Repetitive(Note2)  
EAR  
EAS  
30  
Avalanche Energy  
mJ  
Single Pulsed(Note3)  
1200  
190  
Power Dissipation (TC=25°С)  
PD  
W
V/ns  
°С  
Peak Diode Recovery dv/dt (Note4)  
Junction Temperature  
dv/dt  
TJ  
3.5  
+150  
-55 ~ +150  
Strong Temperature  
TSTG  
°С  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Pulse width limited by TJ(MAX)  
3. VDD=50V, Starting TJ=25°С, Peak IL=21A  
4. ISD21A, di/dt160A/µs, VDD500V, TJ150°С, Suggested=2.35ꢀ  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
30  
UNIT  
°С/W  
°С/W  
Junction to Ambient  
Junction to Case  
θjC  
0.42  
„
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
BVDSS  
IDSS  
VGS =0 V, ID =250µA  
VDS=400V,VGS =0 V  
VDS =0 V, VGS = ±20V  
500  
2.0  
V
25  
µA  
IGSS  
±100 nA  
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°С, ID=1.0mA  
0.78  
210  
V/°С  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS =VGS, ID =250 µA  
VGS =10V, ID =14A  
VGS =10V, ID =21A  
4.0  
270  
310  
V
Static Drain-Source On Resistance (Note)  
mꢀ  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
4300  
1000  
250  
VDS =25V, VGS =0V, f=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
84  
12  
60  
190  
27  
VDS =250V, VGS =10V,  
nC  
ns  
Gate Source Charge  
Gate Drain Charge  
ID =21A  
135  
35  
Turn-ON Delay Time  
Turn-ON Rise Time  
VDD=250V, ID =21A,  
120  
130  
98  
RG =2.35ꢀ  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
tD(OFF)  
tF  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
IS=21A,VGS=0V, TJ =25°С  
1.8  
21  
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
84  
Reverse Recovery Time  
tRR  
IF=21 A, dI/dt=100A/µs,  
TJ =25°С,VDD50V(Note)  
580  
8.1  
ns  
Reverse Recovery Charge  
QRR  
µC  
Note: Pulse Test: Pulse width 300μs, Duty cycle 2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R502-186.C  
www.unisonic.com.tw  
UF460  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
VGS  
VDS  
V(BR)DSS  
15V  
L
tP  
Driver  
DUT  
RG  
+
-
VGS =10V  
VDD  
0V  
IAS  
tP  
0.01Ω  
IAS  
Unclamped Inductive Test Circuit  
Unclamped Inductive Waveforms  
VG  
2µF  
50K  
12V  
+
QG  
-
10V  
3µF  
+
-
VDS  
QGD  
QGS  
VGS  
D.U.T  
IG(REF)=3mA  
IG  
ID  
Charge  
Gate Charge Test Circuit  
Basic Gate Charge Waveform  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R502-186.C  
www.unisonic.com.tw  
UF460  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-186.C  
www.unisonic.com.tw  

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