UF4N20Z [UTC]
4A, 200V N-CHANNEL POWER MOSFET;
| 型号： | UF4N20Z |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4A, 200V N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF4N20Z
Power MOSFET
4A, 200V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
TO-252
The UTC UF4N20Z is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and superior switching
performance.
1
FEATURES
SOT-223
* RDS(ON)<2Ω @ VGS=10V, ID=4A
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
UF4N20ZL-TN3-R
UF4N20ZL-AA3-R
UF4N20ZG-TN3-R
UF4N20ZG-AA3-R
TO-252
G
G
S
S
Tape Reel
Tape Reel
SOT-223
Note: Pin Assignment: G: Gate D: Drain
S: Source
UF4N20ZL-AA3-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(3)Lead Free
(2) AA3: SOT-223, TN3: TO-252
(3) L: Lead Free, G: Halogen Free
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R502-753.D
UF4N20Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Avalanche Current
200
±20
4
V
A
IAR
4
A
Single Pulsed
Repetitive
TO-252
EAS
52
mJ
mJ
Avalanche Energy
Power Dissipation
EAR
52
1.14
0.8
PD
W
SOT-223
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
ID=250µA, VDS=0V
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
200
V
VDS=200V
1
µA
µA
Forward
Reverse
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
10
Gate-Source Leakage Current
IGSS
-10 µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
ID(ON)
ID=250µA
2
0
4
2
V
Ω
A
Static Drain-Source On-State Resistance
On State Drain Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=10V, ID=4A
VGS=10V, VDS=10V, f=1MHz
30
CISS
COSS
CRSS
850 pF
250 pF
200 pF
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
3.2
0.64
1.6
6
nC
nC
nC
ns
ns
ns
ns
VDD=50V, ID=4A, IG=100µA,
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
V
GS=10V
38
VDD=30V, ID=4A, RG=25Ω,
GS=0~10V
V
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
11
13
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
4
A
A
V
ISM
VSD
16
IS=4A
0.1
1.48
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QW-R502-753.D
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UF4N20Z
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
50
100
150
200
250
0
0.7
Gate Threshold Voltage, VTH (V)
1.4 2.1
2.8 3.5
4.2
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
0.6
Drain Current vs. Source to Drain Voltage
1.2
1.0
0.5
VGS=10V, ID=0.425A
0.8
0.6
0.4
0.3
0.2
0.4
0.2
0.1
0
0
0
0.1
0.2 0.3
0.4
0.5
0.6
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (V)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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