UF5305G-TM3-T [UTC]
Power Field-Effect Transistor,;
| 型号： | UF5305G-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF5305
Preliminary
POWER MOSFET
-31A, -55V P-CHANNEL
POWER MOSFET
1
TO-220
TO-251
TO-252
DESCRIPTION
The UTC UF5305 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF5305 is suitable for all commercial-industrial
applications, etc.
1
FEATURES
* RDS(ON) ≤ 0.06 Ω @ VGS=-10V, ID=-16A
* High Switching Speed
* Dynamic dv/dt Rating
1
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
TO-220
TO-251
TO-252
TO-252
Tube
Tube
UF5305L-TA3-T
UF5305L-TM3-T
UF5305L-TN3-T
UF5305L-TN3-R
UF5305G-TA3-T
UF5305G-TM3-T
UF5305G-TN3-T
UF5305G-TN3-R
G
G
G
G
D
D
D
D
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
UF5305G-TA3-T
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2)Package Type
(3)Green Package
(2) TA3: TO-220, TM3: TO-251, TN3: TO-252
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC
L: Lead Free
G: Halogen Free
Date Code
UF5305
1
Lot Code
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 5
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UF5305
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
VDSS
VGSS
-55
±20
-31
-22
-110
-16
280
11
V
VGS=-10V, TC=25°C
A
Continuous
ID
VGS=-10V, TC=100°C
Pulsed (Note 2)
Avalanche Current (Note 2)
A
IDM
IAR
A
A
Single Pulse (Note 3)
Repetitive (Note 2)
EAS
EAR
dv/dt
mJ
mJ
V/ns
W
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
-5.0
110
TO-220
TO-251
TO-252
Power Dissipation (TC=25°C)
PD
42
W
Junction Temperature
TJ
-55 ~ +150
-55 ~ +150
°C
°C
Storage Temperature Range
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. VDD=-25V, Starting TJ=25°C, L=2.1mH, RG=25Ω, IAS=-16A
4. ISD≤-16A, di/dt≤-280A/µs, VDD≤BVDSS, TJ≤150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62
UNIT
°C/W
TO-220
TO-251
TO-252
TO-220
TO-251
TO-252
Junction to Ambient
Junction to Case
θJA
90
1.1
°C/W
°C/W
°C/W
θJC
2.97 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNISONICTECHNOLOGIESCO.,LTD
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QW-R502-842,c
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UF5305
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS VGS=0V, ID=-250µA
-55
V
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
-0.034
V/°C
VDS=-55V, VGS=0V
IDSS
-25
-250
100
µA
µA
nA
nA
Drain-Source Leakage Current
VDS=-44V, VGS=0V, TJ=150°C
Forward
Reverse
VGS=20V, VDS=0V
IGSS
Gate-Source Leakage Current
VGS=-20V, VDS=0V
-100
ON CHARACTERISTICS
Static Drain-Source On-Resistance
Gate Threshold Voltage
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=-10V, ID=-16A (Note 2)
VGS(TH) VDS=VGS, ID=-250µA
0.06
-4.0
Ω
-2.0
V
CISS
1200
520
pF
pF
pF
Output Capacitance
COSS
CRSS
VGS=0V, VDS=-25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
250
QG
QGS
QGD
tD(ON)
tR
63
13
29
nC
nC
nC
ns
ns
ns
ns
ID=-16A, VDS=-44V, VGS=-10V
(Note 2)
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-ON Delay Time
Rise Time
14
66
39
63
VDD=-28V, ID=-16A, RG=6.8Ω
RD=1.6Ω (Note 2)
Turn-OFF Delay Time
Fall Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
Current
IS
-31
-110
-1.4
A
A
V
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
TJ=25°C, IS=-16A, VGS=0V
(Note 2)
Drain-Source Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
71
110
250
ns
TJ=25°C, IF=-16A,
di/dt=-100A/µs (Note 2)
QRR
170
nC
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
QW-R502-842,c
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UF5305
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
IFM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONICTECHNOLOGIESCO.,LTD
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UF5305
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
-10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
-3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
VDS
90%
RG
RD
VDS
VGS
-10V
10%
VGS
DUT
tR
td(OFF)
td(ON)
tON
Resistive Switching Waveforms
tF
tOFF
Resistive Switching Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
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