UF540L-TF3-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | UF540L-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总4页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF540
Power MOSFET
27A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF540 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide the
customers with a minimum on-state resistance and high switching
speed.
The UTC UF540 is suitable for AC&DC motor controls and
switching power supply, etc
FEATURES
* RDS(on) < 85mΩ @ VGS = 10 V, ID=15A
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
UF540L-TA3-T
UF540L-TF3-T
UF540G-TA3-T
UF540G-TF3-T
TO-220
G
G
Tube
Tube
TO-220F
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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QW-R502-715.C
UF540
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
100
UNIT
V
Drain-Source Voltage (Note 2)
Gate-Source Voltage
VGSS
±20
V
TC=25°C
27
A
Continuous
ID
Drain Current
TC=100°C
17
A
Pulsed
IDM
PD
108
A
TO-220
125
W
W
°C
°C
Power Dissipation (TC=25°C)
TO-220F
50
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ = +25~+150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
1.0
UNIT
°C/W
°C/W
TO-220
Junction to Case
θJC
TO-220F
2.46
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
100
V
250 µA
+500 nA
-500 nA
VDS=100V, VGS=0V
VGS=+20V, VDS=0V
Forward
Reverse
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=15A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
85 mΩ
CISS
COSS
CRSS
1680
250
40
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
90
120
300
145
100
12
ns
ns
VDD=30V, ID=0.5A, VGS=10V,
RGEN=25Ω (Fig.1, 2)
Turn-OFF Delay Time
Fall-Time
ns
(Note 2)
ns
Total Gate Charge
QG
VDD=80V, ID=16A, VGS=10V,
nC
nC
nC
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
30
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Notes: 1. Pulse width limited by TJ.
VSD
trr
IS=27A, VGS=0V
2.0 2.5
300
V
ns
A
IS=4.0A, dIS/dt=25A/µs
IS
27
ISM
108
A
2. Switching time measurements performed on LEM TR-58 Test equipment.
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QW-R502-715.C
www.unisonic.com.tw
UF540
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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UF540
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
25
50
75
100 125
0
0.5
Gate Threshold Voltage, VTH (V)
1
1.5
2
2.5
3
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
20
20
16
12
16
12
8
VGS=10V, ID=15A
8
4
4
0
VGS=10V, ID=2A
0
0
0.1
0.2
0.3
0.4
0.5
0
0.2
0.4 0.6
0.8 1.0 1.2
Drain to Source Voltage, VDS (V)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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