UF601 [UTC]
0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET; 0.185A ， 600V N沟道耗尽型功率MOSFET
| 型号： | UF601 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET |
| 文件： | 总3页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF601
Power MOSFET
0.185A, 600V N-CHANNEL
DEPLETION-MODE POWER
MOSFET
3
DESCRIPTION
1
2
The UTC UF601 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed.
SOT-23
(SC-59)
FEATURES
* RDS(ON)=700Ω @ VGS=0V,ID=3mA
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
2 3
Package
SOT-23
Packing
Lead Free
Halogen Free
UF601G-AE3-R
1
UF601L-AE3-R
S
G
D
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-699.C
UF601
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VDGX
VGSS
ID
RATINGS
600
UNIT
V
Drain-Source Voltage (Note 2)
Drain-Gate Voltage (Note 2)
Gate-Source Voltage
600
V
±20
V
Continuous
Pulsed
0.185
0.740
0.50
A
Drain Current
IDM
A
Power Dissipation
PD
W
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
250
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
ID(OFF)
ID=250µA, VGS=-5V
VDS=600V, VGS=-5V
GS=+20V, VDS=0V
600
V
0.1
μA
Forward
Reverse
V
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
IDSS
VDS=3V, ID=8µA
VDS=25V, VGS=0V
VGS=0V, ID=3mA
-2.7
7.0
-1.5
V
mA
ꢀ
Drain-Source Leakage Current
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON)
600 700
CISS
COSS
CRSS
9.44
2.28
1.42
pF
pF
pF
VGS=0V, VDS=25V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
1.29
0.1
0.47
4
nC
nC
nC
ns
ns
ns
ns
VGS=-5~5V, VDS=30V,
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
ID=5mA
9
VGS=-5~5V, VDD=30V,
ID=5mA, RG=20ꢀ
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
14
84
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD ISD=3.0mA, VGS=-10V
1.4
V
Notes: 1. Repetitive rating, pulse width limited by maximum junction temperature.
2. Pulse width≤380μs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-699.C
www.unisonic.com.tw
UF601
Power MOSFET
TYPICAL CHARACTERISTICS
TR
TF
VDD=30V ,ID=5mA, RG=20ꢀ
VDD=30V ,ID=5mA, RG=20ꢀ
10V
/5V
10V
/5V
0
0
-10V
/-5V
-10V
/-5V
0
1000
2000
0
200
400
Time (200ns/div)
Time (40ns/div)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-699.C
www.unisonic.com.tw
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