UF8010L-TA3-T [UTC]
80A, 100V N-CHANNEL POWER MOSFET; 80A ， 100V N沟道功率MOSFET
| 型号： | UF8010L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 80A, 100V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF8010
Preliminary
Power MOSFET
80A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF8010 uses advanced technology to provide
excellent RDS(ON), fast switching speed, low gate charge, and
excellent efficiency. This device is suitable for high frequency DC-DC
converters, UPS and motor control.
FEATURES
* RDS(ON) :12mΩ (Typ.)
* Lower gate-drain charge for lower switching losses
* Perfect avalanche voltage and current performance
* Fully characterized capacitance including effective COSS to simplify
design
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
UF8010G-TA3-T
UF8010G-TF3-T
UF8010G-TQ2-T
1
2
D
D
D
3
S
S
S
UF8010L-TA3-T
UF8010L-TF3-T
UF8010L-TQ2-T
TO-220
TO-220F
TO-263
Tube
Tube
Tube
G
G
G
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-348.c
UF8010
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VGS
RATINGS
±20
UNIT
V
Gate to Source Voltage
Continuous Drain Current (VGS=10V,TC=25°C)
Pulsed Drain Current
ID
80 (Note 2)
320
A
IDM
A
Single Pulse (Note 2)
Repetitive
EAS
310
mJ
mJ
A
Avalanche Energy
EAR
26
Avalanche Current
IAR
45
Peak Diode Recovery dv/dt (Note 3)
dv/dt
16
V/ns
W
TO-220 / TO-263
260
Power Dissipation(TC=25°C)
Derating above 25°C
TO-220F
54
W
PD
TO-220 / TO-263
TO-220F
1.8
W/°C
W/°C
°C
0.36
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ + 175
TSTG
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ = 25°C, L = 0.31mH, RG =25Ω, IAS = 45A.
3. ISD≤45A, di/dt≤110A/μs, VDD≤BVDSS, TJ≤ 175°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
Junction to Ambient
θJA
TO-220 / TO-263
TO-220F
0.57
Junction to Case
θJC
2.3
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UF8010
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Current
Gate-Source Reverse Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
BVDSS
IDSS
VGS =0 V, ID =250μA
100
2.0
V
VDS=100V,VGS =0V
VGS = 20 V
20
μA
200 nA
-200 nA
IGSS
VGS = -20 V
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
4.0
15
V
VGS = 10 V, ID = 45A (Note 1)
12
mΩ
CISS
COSS
CRSS
3830
480
59
pF
pF
pF
VDS =25 V,VGS =0V, f =1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
15
130
61
ns
ns
ns
ns
Rise Time
VDS =50V,ID = 80A, RG = 39Ω
VGS = 10V (Note 1)
Turn-Off Delay Time
Fall Time
120
81
Total Gate Charge
QG
120 nC
nC
VDS=80V, VGS=10V
Gate-Source Charge
QGS
QGD
22
ID= 80A (Note 1)
Gate-Drain Charge
26
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
IS=80 A ,VGS =0 V,
TJ = 25°C (Note 1)
Drain-Source Diode Forward Voltage
VSD
IS
1.3
80
V
A
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
320
150
A
IF=80A, VDD=50V, TJ = 150℃
di/dt = 100 A/μs (Note 1)
Reverse Recovery Time
Reverse Recovery Charge
tRR
99
ns
QRR
460 700 nC
Note: 1. Pulse width ≤ 300μs; duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-348.c
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UF8010
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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UF8010
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-348.c
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UF8010
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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