UF830G-TM3-R [UTC]
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3;
| 型号： | UF830G-TM3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF830
Power MOSFET
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
1
1
TO-220
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is
TO-220F
designed for high voltage, high speed power switching applications such as
switching regulators, switching converters, solenoid, motor drivers, relay
drivers.
1
FEATURES
TO-220F1
* 4.5A, 500V, RDS(ON)=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
1
TO-262
TO-263
1
SYMBOL
2.Drain
1
TO-251
TO-252
1.Gate
1
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
D
D
D
D
3
S
S
S
S
S
S
S
S
UF830L-TA3-T
UF830L-TF3-T
UF830L-TF1-T
UF830L-TM3-T
UF830L-TN3-R
UF830L-T2Q-T
UF830L-TQ2-R
UF830L-TQ2-T
UF830G-TA3-T
UF830G-TF3-T
UF830G-TF1-T
UF830G-TM3-T
UF830G-TN3-R
UF830G-T2Q-T
UF830G-TQ2-R
UF830G-TQ2-T
TO-220
TO-220F
TO-220F1
TO-251
TO-252
TO-262
TO-263
TO-263
G
G
G
G
G
G
G
G
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-046,F
UF830
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
VDS
RATINGS
500
UNIT
V
Drain to Source Voltage (TJ=25°C ~125°C)
Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C)
Gate to Source Voltage
VDGR
VGS
500
V
±30
V
Continuous
ID
4.5
A
Drain Current
Pulsed
IDM
18
A
TO-220/TO-262/TO-263
Power Dissipation
73
W
W
W
mJ
°C
°C
PD
TO-220F/ TO-220F1
38
(TC = 25°C)
TO-251/TO-252
Single Pulse Avalanche Energy Rating (Note 2)
Junction Temperature
46
EAS
TJ
300
+150
-55 ~ +150
Storage Temperature
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A
THERMAL DATA
PARAMETER
TO-220/TO-262/TO-263
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
TO-220F/ TO-220F1
TO-251/TO-252
θJA
62.5
100.3
1.71
TO-220/TO-262/TO-263
TO-220F/ TO-220F1
TO-251/TO-252
Junction to Case
θJc
3.31
2.7
ELECTRICAL SPECIFICATIONS (Ta =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
BVDSS
TEST CONDITIONS
ID=250μA, VGS=0V
VGS=VDS, ID=250μA
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
500
2.0
V
V
VGS(TH)
ID(ON)
4.0
On-State Drain Current (Note 1)
VDS>ID(ON)×RDS(ON)MAX, VGS=10V 4.5
A
VDS= Rated BVDSS, VGS=0V
25
μA
Drain-Source Leakage Current
IDSS
V
V
DS=0.8×Rated BVDSS
GS=0V, TJ= 125°C
250
μA
Gate-Source Leakage Current
Static Drain-Source On-State Resistance
(Note 2)
IGSS
VGS=±30V
±100 nA
RDS(ON)
ID=2.5A, VGS=10V
VDS≥10V, ID=2.7A
1.3
1.5
Ω
Forward Transconductance (Note 1)
Turn-On Delay Time
gFS
tD(ON)
tR
2.5
4.2
10
S
17
23
53
23
32
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
Turn-On Rise Time
VDD=250V, ID≈4.5A
15
RGS=12Ω, RL =54Ω (Note 2)
Turn-Off Delay Time
tD(OFF)
tF
33
Turn-Off Fall Time
16
Total Gate Charge
QG
22
VGS=10V, ID=4.5A
DS=0.8×Rated BVDSS
G(REF)=1.5mA (Note 3)
V
I
Gate-Source Charge
QGS
QGD
CISS
COSS
CRSS
3.5
11
Gate-Drain Charge
Input Capacitance
600
100
20
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-046,F
UF830
Power MOSFET
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
MIN TYP MAX UNIT
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
Internal Source Inductance
3.5
4.5
nH
nH
LD
Measured from the source lead(6mm from header) to source bond pad
LS
7.5
nH
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
VSD
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage
(Note 1)
TJ=25°C, ISD=4.5A, VGS=0V
1.6
V
Continuous Source to Drain Current
Pulse Source to Drain Current
Reverse Recovery Time
Reverse Recovery Charge
ISD
ISDM
tRR
5.5
18
A
A
Note 2
TJ=25°C, ISD=4.5A, dI/dt=100A/μs
TJ=25°C, ISD=4.5A, dI/dt=100A/μs
180
350
2.2
760
4.3
ns
μC
QRR
0.96
NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
D
G
S
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-046,F
UF830
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
L
VARY tp TO OBTAIN
REQUIRED PEAK IAS
+
-
RG
VDD
VGS
DUT
tp
0V
IAS
0.01Ω
FIG 1. UNCLAMPED ENERGY TEST CIRCUIT
FIG 2. UNCLAMPED ENERGY WAVEFORMS
RL
+
-
RG
VDD
DUT
VGS
FIG 3. SWITCHING TIME TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-046,F
UF830
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tDLY(ON)
tOFF
tDLY(OFF)
tR
tF
VDS
90%
90%
10%
10%
0
90%
50%
VGS
10%
50%
PULSE WIDTH
0
FIG 4. RESISTIVE SWITCHING WAVEFORMS
FIG 5. GATE CHARGE TEST CIRCUIT
FIG 6. GATE CHARGE WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-046,F
UF830
Power MOSFET
TYPICAL CHARACTERISTICS
Normalized Power Dissipation vs. Case
Temperature
Maximum Contionuous Drain Current vs. Case
Temperature
5
1.2
1.0
4
0.8
0.6
3
2
0.4
0.2
0
1
0
150
150
50
100
25
50
75
100
125
0
Case Temperature, TC (°C)
Case Temperature,TC (°C)
Normalized Maximum Transient Thermal
Impedance
Forward Bias Safe Operating Area
100
10
Operation in This Region
is Limited by rDS (on)
1
0.5
0.2
0.1
PDM
0.1
0.05
t1
0.02
1
0.01
t2
*Notes:
Duty Factor, D=t1/t2
TC=25°C
TJ=Max Rated
Single Pulse
Single pulse
Peak TJ =PDM×ZθJC×RθJC +TC
1
0.1
0.01
10-5 10-4
10-3
10-2
10-1
102
103
10
1
10
Rectangular Pulse Duration, t1 (s)
Drain to Source Voltage, VDS (V)
Output Characteristics
Saturation Characteristics
VGS=10V
5
4
6
5
4
Pulse Duration=80μs
VGS=5.5V
VGS=10V
VGS=5.5V
Duty Cycle = 0.5% Max
VGS=5.0V
VGS=5.0V
3
2
Pulse Duration=80μs
Duty Cycle = 0.5% Max
3
2
1
VGS=4.5V
VGS=4.5V
VGS=4.0V
1
0
VGS=4.0V
150
0
0
100
250
200
300
10
50
0
2
4
6
8
Drain to Source Voltage, VDS (V)
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-046,F
UF830
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Drain to Source on Resistance vs.
Gate Voltage and Drain Current
Pulse Duration=80μs
Duty Cycle = 0.5% Max
Transfer Characteristics
5
4
3
10
8
Pulse Duration=80μs
Duty Cycle = 0.5% Max
VDS>ID(ON)×rDS(ON)MAX
6
TJ = 125°C
TJ = 25°C
TJ = -40°C
VGS=10V
2
1
0
4
2
VGS=20V
0
7
4
8
20
1
2
3
12
16
4
6
0
5
0
Gate to Source Voltage, VGS (V)
Case Temperature, TC (°C)
Normalized Drain to Source on Resistance vs.
Junction Temperature
Normalized Drain to Source Breakdown Voltage vs.
Junction Temperature
2.2
1.8
1.4
1.25
1.15
1.05
0.95
0.85
0.75
ID=250μA
Pulse Duration=80μs
Duty Cycle = 0.5% Max
GS =10V, ID=2.5A
V
1.0
0.6
0.2
20
Junction Temperature, TJ (°C)
-20
140
-60
0
40 60
80 100
120
-40
120 140 160
80 100
0
60
20 40
-40
-20
Junction Temperature, TJ (°C)
Capacitance vs. Drain to Source Voltage
VGS=0V, f=1MHz
Transconductance vs. Drain Current
2000
5
Pulse Duration=80μs
Duty Cycle = 0.5% Max
CISS=CGS+CGD
TJ= -40°C
TJ= 25°C
TJ= 125°C
CRSS=CGD
COSS=CDS+CGS
4
1600
1200
800
400
0
3
2
1
0
CISS
COSS
CRSS
50
3
4
5
1
20
30
30
2
1
10
0
Drain to Source Voltage, VDS (V)
Drain Current, ID (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-046,F
UF830
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-046,F
相关型号：
UF830G-TN3-R
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
UTC
UF830G-TQ2-R
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN
UTC
UF830G-TQ2-T
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明