UF830KG-TM3-T [UTC]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR;
| 型号： | UF830KG-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总7页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF830K-MT
Power MOSFET
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF830K-MT is a N-Channel enhancement mode
silicon gate power MOSFET is designed high voltage, high speed
power switching applications such as switching regulators,
switching converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON) < 1.50Ω @ VGS = 10V, ID = 2.5 A
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
S
S
S
UF830KL-TA3-T
UF830KL-TF3-T
UF830KG-TA3-T
UF830KG-TF3-T
UF830KG-TF1-T
UF830KG-TF2-T
UF830KG-TF3T-T
UF830KG-TM3-T
UF830KG-TMS-T
UF830KG-TMS2-T
UF830KG-TMS4-T
UF830KG-TN3-R
UF830KG-TND-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
Tube
Tube
UF830KL-TF1-T
Tube
UF830KL-TF2-T
Tube
UF830KL-TF3T-T
UF830KL-TM3-T
Tube
Tube
UF830KL-TMS-T
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
UF830KL-TMS2-T
UF830KL-TMS4-T
UF830KL-TN3-R
Tube
Tube
Tape Reel
Tape Reel
UF830KL-TND-R
TO-252D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
1 of 7
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R209-030.D
UF830K-MT
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R209-030.D
UF830K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
VDS
RATINGS
500
UNIT
V
Drain to Source Voltage (TJ=25°C ~125°C)
Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C)
Gate to Source Voltage
VDGR
VGS
500
V
±30
V
Continuous
ID
4.5
A
Drain Current
Pulsed
IDM
18
A
TO-220
73
W
TO-220F/TO-220F1
TO-220F3
38
40
W
W
Power Dissipation (TC = 25°C)
PD
TO-220F2
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
46
W
Single Pulse Avalanche Energy Rating (Note 2)
Junction Temperature
EAS
TJ
300
+150
mJ
°C
°C
Storage Temperature
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
θJA
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
TO-220
100.3
°C/W
1.71
3.31
°C/W
°C/W
°C/W
TO-220F/TO-220F1
TO-220F3
Junction to Case
θJC
TO-220F2
3.125
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
2.7
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R209-030.D
UF830K-MT
Power MOSFET
ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 1)
BVDSS
ID(ON)
ID=250μA, VGS=0V
500
V
A
VDS>ID(ON)×RDS(ON)MAX, VGS=10V 4.5
VDS= Rated BVDSS, VGS=0V
VDS=0.8×Rated BVDSS
25
μA
Drain-Source Leakage Current
IDSS
IGSS
250
μA
VGS=0V, TJ= 125°C
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS=±30V
±100 nA
VGS(TH)
RDS(ON)
VGS=VDS, ID=250μA
2.0
4.0
V
ID=2.5A, VGS=10V (Note 2)
1.50
Ω
CISS
COSS
CRSS
420
66
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-On Delay Time
6.5
tD(ON)
tR
tD(OFF)
tF
48
48
ns
ns
Turn-On Rise Time
VDD=30V, ID≈0.5A RGS=25Ω
(Note 2)
Turn-Off Delay Time
42
ns
Turn-Off Fall Time
44
ns
Total Gate Charge
QG
13.8
5.4
6.0
nC
nC
nC
V
GS=10V, ID=1.3A, VDD=50V
Gate-Source Charge
QGS
QGD
IG=100mA (Note 3)
Gate-Drain Charge
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
VSD
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage
Continuous Source to Drain Current
Pulse Source to Drain Current
TJ=25°C,ISD=4.5A, VGS=0V(Note 1)
1.6
5.5
18
V
A
A
ISD
(Note 2)
ISDM
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R209-030.D
UF830K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
L
Vary tP to Obtain
Required Peak IAS
+
-
RG
VDD
VGS
DUT
tp
0V
IAS
0.01Ω
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
RL
+
-
RG
VDD
DUT
VGS
Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R209-030.D
UF830K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tDLY(ON)
tOFF
tDLY(OFF)
tR
tF
VDS
90%
90%
10%
10%
0
90%
50%
VGS
10%
50%
PULSE WIDTH
0
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R209-030.D
UF830K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-State Resistance
Continuous Source to Drain Current vs.
Source to Drain Voltage
Characteristics
4
7
6
3
2
5
4
3
2
1
0
1
0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (V)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R209-030.D
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