UF9Z34G-TA3-T [UTC]
-17A, -55V P-CHANNEL POWER MOSFET;
| 型号： | UF9Z34G-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | -17A, -55V P-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF9Z34
Preliminary
POWER MOSFET
-17A, -55V P-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC UF9Z34 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF9Z34 is suitable for all commercial-industrial
applications, etc.
1
TO-220
FEATURES
* RDS(ON)<0.1Ω @ VGS=-10V, ID=-10A
* High Switching Speed
* Dynamic dv/dt Rating
SYMBOL
D
G
S
ORDERING INFORMATION
Ordering Number
Pin Assignment
2
Package
TO-220
Packing
Tube
Lead Free
Halogen Free
UF9Z34G-TA3-T
1
3
UF9Z34L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-843.A
UF9Z34
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-55
±20
VGSS
V
VGS=-10V, TC=25°C
-17
A
Continuous
ID
VGS=10V, TC=100°C
Pulsed (Note 2)
Avalanche Current (Note 2)
-12
A
IDM
IAR
-68
A
-10
A
Single Pulse (Note 3)
Repetitive (Note 2)
EAS
EAR
dv/dt
180
mJ
mJ
V/ns
W
Avalanche Energy
5.6
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation (TC=25°C)
Linear Derating Factor
-6.7
56
PD
0.37
-55~+150
-55~+150
W/°C
°C
°C
Junction Temperature
TJ
Storage Temperature Range
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ=25°C, L=3.6mH, RG=25ꢀ, IAS=-10A.
3. ISD≤-10A, di/dt≤-290A/µs, VDD≤BVDSS, TJ≤150°C.
4. Pulse width≤300µs; duty cycle≤2%.
THERMAL RESISTANCE
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
62
θJC
2.7
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UF9Z34
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS=0V, ID=-250µA
-55
V
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
-0.05
V/°C
VDS=-55V, VGS=0V
IDSS
-25 µA
-250 µA
100 nA
-100 nA
Drain -Source Leakage Current
VDS=-44V, VGS=0V, TJ=150°C
Forward
VGS=20V, VDS=0V
IGSS
Gate-Source Leakage Current
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Static Drain-Source On-State
Resistance
RDS(ON) VGS=-10V, ID=-10A (Note 2)
VGS(TH) VDS=VGS, ID=-250µA
0.10
-4.0
ꢀ
Gate Threshold Voltage
DYNAMIC PARAMETERS
Input Capacitance
-2.0
V
CISS
620
280
140
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
COSS
CRSS
VGS=0V, VDS=-25V, f=1.0MHz
QG
QGS
QGD
tD(ON)
tR
35 nC
7.9 nC
16 nC
ns
Gate to Source Charge
Gate to Drain ("Miller") Charge
Turn-ON Delay Time
Rise Time
ID=-10A, VDS=-44V, VGS=-10V (Note 2)
13
55
30
41
ns
VDD=-28V, ID=-10A, RG=13ꢀ
RD=2.6ꢀ (Note 2)
Turn-OFF Delay Time
Fall Time
tD(OFF)
tF
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous
Source Current
IS
-17
-68
A
A
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
tRR
TJ=25°C, IS=-10A, VGS=0V (Note 2)
TJ=25°C, IF=-10A, di/dt=-100A/µs
(Note 2)
-1.3
82
V
54
ns
QRR
110 160 nC
Note: 1. Starting TJ=25°C, L=3.6mH, RG=25ꢀ, IAS=-10A
2. Pulse width≤300µs; duty cycle≤2%.
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UF9Z34
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
-10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
-3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
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UF9Z34
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
VGS
D=
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UF9Z34
Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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