UFR14040CG-T47-T [UTC]

Rectifier Diode,;


型号：	UFR14040CG-T47-T
厂家：	Unisonic Technologies
描述：	Rectifier Diode, 超快软恢复二极管快速软恢复二极管局域网测试
文件：	总4页 (文件大小：168K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UFR14040C

FAST RECOVERY EPITAXIAL DIODE

ULTRAFAST SOFT RECOVERY

RECTIFIER DIODE



DESCRIPTION

The UTC UFR14040C utilizes advanced processing techniques

to achieve ultrafast recovery times and higher forward current. Its

soft recovery characteristics and high reliability suit for wide

industrial applications.



FEATURES

* Ultrafast Recovery Time

* Soft Recovery Characteristics

* Low Recovery Loss

* Low Forward Voltage

* High Surge Current Capability

* Low Leakage Current



SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free

Halogen Free

UFR14040CL-T3P-T

UFR14040CL-T47-T

UFR14040CG-T3P-T

UFR14040CG-T47-T

TO-3P

Tube

TO-247

Note: Pin Assignment: A: Anode K: Cathode



MARKING

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QW-R201-124.A

UFR14040C

FAST RECOVERY EPITAXIAL DIODE



ABSOLUTE MAXIMUM RATINGS (T_C=25°C unless otherwise specified)

PARAMETER

SYMBOL

V_R

RATINGS

400

UNIT

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

V_RRM

400

V_RWM

400

Maximum Average Forward Current

(T_C=110°C)

Per Leg

Total

I_F(AV)

I_F(RMS)

I_FSM

140

RMS Forward Current (T_C=110°C)

Non-Repetitive Forward Surge Current

(T_J=45°C, t=10ms, 50Hz, Sine)

Operating Temperature Range

Storage Temperature Range

420

T_J

-40 ~ +150

°C

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

0.8

UNIT

°C/W

Junction to Case

θ_JC



STATIC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

V_F

TEST CONDITIONS

I_F=70A

MIN TYP MAX UNIT

1.5

1.3

Forward Voltage

I_F=70A, T_J=150°C

V_R=400V

µA

Maximum Reverse Leakage Current

I_RM

V_R=400V, T_J=150°C

100 µA



DYNAMIC CHARACTERISTICS

PARAMETER

SYMBOL

t_rr

TEST CONDITIONS

MIN TYP MAX UNIT

I_F=1A, di_F/dt=-200A/µs,

V_R=200V

Reverse Recovery Time

I_F=30A, di_F/dt=-100A/µs,

V_R=200V

t_rr

UNISONIC TECHNOLOGIES CO., LTD

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UFR14040C

FAST RECOVERY EPITAXIAL DIODE



TEST CIRCUITS AND WAVEFORMS

1. I_F- Forward Conduction Current

2. di_F/dt - Rate of Diode Current Change Through Zero Crossing.

3. I_RRM- Maximum Reverse Recovery Current.

4. t_rr- Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to

the point at which the straight line through I_RRMand 0.25·I_RRMpasses through zero.

5. Qrr - Area Under the Curve Defined by I_RRMand t_rr.

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UFR14040C

FAST RECOVERY EPITAXIAL DIODE



TYPICAL CHARACTERISTICS

Reverse Current Vs. Reverse

Breakdown Voltage

Average Rectified Forward Current

vs. Forward Voltage

100

150°C

25°C

0.1

0.01

0.001

25°C

0.1

18 20

8 10 12 14 16

0.2 0.4 0.6 0.8

1.2 1.4 1.6

Reverse Breakdown Voltage, V_R(V)

Forward Voltage, V_F(V)

Average Rectified Forward Current

vs. Junction Temperature

160

140

120

100

100 125 150

Junction Temperature, T_J(°C)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all UTC products described or contained herein.

UTC products are not designed for use in life support appliances, devices or systems where malfunction

of these products can be reasonably expected to result in personal injury. Reproduction in whole or in

part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to

make changes to information published in this document, including without limitation specifications and

product descriptions, at any time and without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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