UFR9120 [UTC]
P CHANNEL POWER MOSFET; P沟道功率MOSFET
| 型号： | UFR9120 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UFR9120
Preliminary
Power MOSFET
P CHANNEL POWER MOSFET
DESCRIPTION
The UTC UFR9120 is a P-channel power MOSFET using UTC’s
advanced processing technology to provide customers a minimum
on-state resistance and high switching speed
FEATURES
* Fully Avalanche Rated
* High Switching Speed
* extremely Low On-Resistance
* Surface Mount
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
3
Lead Free
Halogen Free
1
2
UFR9120L-TN3-R
UFR9120L-TN3-T
UFR9120G-TN3-R
UFR9120G-TN3-T
TO-252
TO-252
G
G
D
S
S
Tape Reel
Tube
D
Note: Pin Assignment: G: Gate D: Drain
S: Source
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UFR9120
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
-100
±20
VGSS
V
TC=25°C
-6.6
A
Continuous
ID
Drain Current, VGS@-10V
TC=100°C
-4.2
A
Pulsed (Note 2)
IDM
IAR
-26
A
Avalanche Current (Note 2)
Avalanche Energy
-6.6
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
dv/dt
100
mJ
mJ
V/ns
W
4.0
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation TC=25°C
Linear Derating Factor
-5.0
40
PD
0.32
+150
-55~+150
W/°C
°C
°C
Junction Temperature
TJ
Storage Temperature
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; pulse width limited by max. junction temperature.(See Fig.11)
3. Starting TJ=25°C, L=13mH RG=25Ω, IAS=-3.9A (See Fig.12)
4. ISD ≤ -4.0A, di/dt ≤300A/μs,VDD ≤ V(BR)DSS, TJ ≤ 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
110
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
3.1
Note: 1. For recommended footprint and soldering techniques refer to application note
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UFR9120
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
-100
V
△BVDSS/△TJ Reference to 25°C, ID=-1mA
-0.11
V/°C
VDS=-100V, VGS=0V
IDSS
-25
Drain-Source Leakage Current
Gate- Source Leakage Current
µA
V
DS=-80V, VGS=0V , TJ=150°C
-250
Forward
Reverse
VGS=+20V
GS=-20V
+100 nA
-100 nA
IGSS
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250µA
VGS=-10V, ID=-3.9A
-2.0
-4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.48
ꢀ
CISS
COSS
CRSS
350
110
70
pF
pF
pF
VGS=0V, VDS=-25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
27
nC
VGS=-10V, VDS=-80V, ID=-4.0A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
5.0 nC
(Note 1, 2)
15
nC
ns
ns
ns
ns
14
47
28
31
VDD=-50V, ID= -4.0A, RG= 12ꢀ,
RD=12ꢀ (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed
Current (Note 1)
IS
-6.6
-26
A
A
V
MOSFET symbol showing the
integral reverse p-n junction diode
ISM
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
tRR
IS=-3.9A, VGS=0V, TJ =25°C
IF=-4.0A, VGS=0V, di/dt = 100A/µs,
TJ =25°C (Note 1)
-2.0
100 150 ns
420 630 nC
QRR
Notes: 1. Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
2. Essentially independent of operating temperature.
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UFR9120
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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UFR9120
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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UFR9120
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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