UG5JG-AL5-R [UTC]
NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS); NPN数字晶体管内置的偏置电阻）
| 型号： | UG5JG-AL5-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS) |
| 文件： | 总3页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UG5J
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Two DTC114Y chips in a SOT-353 package.
* Mounting cost and area can be reduced in half.
STRUCTURE
* Epitaxial planar type
* NPN silicon transistor
(Built-in resistor type)
* Halogen Free
ORDERING INFORMATION
Pin Assignment
Ordering Number
UG5JG-AL5-R
Package
SOT-353
Packing
1
2
3
4
5
I1 G1,G2
I2
O2
O1
Tape Reel
MARKING INFORMATION
5
4
UG5J
2
1
3
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 3
QW-R222-004,A
UG5J
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
VCC
RATINGS
UNIT
V
Supply Voltage
50
40
-6
Input Voltage
VIN
V
IOUT
IC(MAX)
PD
70
Output Current
mA
100
Total Power Dissipation
Junction Temperature
Storage Temperature
150 (Note 2)
+150
mW
℃
TJ
TSTG
-50 ~ +150
℃
Notes : 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 120mW per element must not be exceeded.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS
VI(OFF) VCC=5V, IO=100µA
VI(ON) VO=0.3V, IO=1mA
VO(ON) IO=5mA, II=0.25mA
MIN TYP MAX UNIT
0.3
Input Voltage
V
1.4
Output Voltage
Input Current
0.1 0.3
V
II
IO(OFF)
GI
VI=5V
0.88 mA
Output Current
VCC=50V, VI=0V
0.5
13
µA
DC Current Gain
Transition Frequency
Input Resistance
Resistance Ratio
VO=5V, IO=5mA
68
fT
VCE=10V, IE=-5mA, f=100MHz (Note 1)
250
10
MHz
R1
7
KΩ
R2/R1
3.7
4.7 5.7
Note: 1.Transition frequency of the device.
EQUIVALENT CIRCUIT (The following characteristic apply to both DTr1 and DTr2)
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R222-004,A
www.unisonic.com.tw
UG5J
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-
Emitter Voltage
6
5
4
IB=34.6µA
IB=29.6µA
IB=24.6µA
3
2
1
IB=19.6µA
0
0
1
2
3
4
5
6
7
8
9
Collector-Emitter Voltage, VCE(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R222-004,A
www.unisonic.com.tw
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