UG8JG-AL5-R [UTC]

Small Signal Bipolar Transistor;
UG8JG-AL5-R
型号: UG8JG-AL5-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UG8J  
NPN SILICON TRANSISTOR  
EMITTER COMMON (DUAL  
DIGITAL TRANSISTORS)  
FEATURES  
* Two DTC143Z chips in a SOT-353 package.  
* Mounting cost and area can be cut in half.  
STRUCTURE  
* Epitaxial planar type  
* NPN silicon transistor  
(Built-in resistor type)  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
SOT-353  
Lead Free  
Halogen Free  
UG8JG-AL5-R  
1
2
3
4
5
UG8JL-AL5-R  
B1 E1,E2 B2  
C2  
C1  
Tape Reel  
UG8JL-AL5-R  
(1)Packing Type  
(2)Package Type  
(3)Lead Plating  
(1) R: Tape Reel  
(2) AL5: SOT-353  
(3) L: Lead Free, G: Halogen Free  
MARKING INFORMATION  
www.unisonic.com.tw  
Copyright © 2013 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R222-002. C  
UG8J  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCC  
RATINGS  
UNIT  
V
Supply Voltage  
Input Voltage  
50  
30  
VIN  
V
5
IOUT  
100  
100  
Output Current  
mA  
mW  
IC(MAX)  
Total Power Dissipation  
PD  
150 (Note1)  
Junction Temperature  
TJ  
+150  
°C  
°C  
Storage Temperature  
TSTG  
-40 ~ +150  
Note: 1. 120mW per element must not be exceeded.  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VI(OFF)  
VI(ON)  
VO(ON)  
IIN  
TEST CONDITIONS  
VCC=5V, IOUT=100µA  
MIN TYP MAX UNIT  
0.5  
Input Voltage  
V
VOUT=0.3V, IOUT=5mA  
IOUT=5mA, IIN=0.25mA  
VIN=5V  
1.3  
Output Voltage  
Input Current  
Output Current  
0.1  
0.3  
V
1.8 mA  
IO(OFF)  
GI  
VCC=50V, VIN=0V  
0.5  
µA  
DC Current Gain  
VOUT=5V, IOUT=10mA  
VCE=10V, IE=-5mA, f=100MHz*  
80  
Transition Frequency  
Input Resistance  
fT  
250  
MHz  
R1  
3.29 4.7 6.11 K  
10 12  
Resistance Ratio  
R2/R1  
8
Note: *Transition frequency of the device.  
EQUIVALENT CIRCUIT (The following characteristic apply to both DTr1 and DTr2)  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R222-002. C  
www.unisonic.com.tw  
UG8J  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Input Voltage vs. Output Current  
(ON Characteristics)  
Output Current vs. Input Voltage  
(OFF Characteristics)  
100  
50  
10m  
5m  
VCC=5V  
VOUT=0.3V  
2m  
1m  
500µ  
20  
10  
Ta=100℃  
25℃  
Ta=-20℃  
25℃  
200µ  
100µ  
50µ  
5
-20℃  
2
1
100℃  
20µ  
10µ  
5µ  
2µ  
1µ  
500m  
200m  
100m  
100µ  
200µ 500µ 1m 2m 5m 10m 20m 50m 100m  
Output Current, IOUT (A)  
2.0 2.5 3.0  
Input Voltage, VI(OFF) (V)  
0
0.5  
1
1.5  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R222-002. C  
www.unisonic.com.tw  

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