UGV3040L-TF3-T [UTC]
Low Phase Noise;
| 型号： | UGV3040L-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Low Phase Noise |
| 文件： | 总4页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UGV3040
Insulated Gate Bipolar Transistor
300mJ, 400V N-CHANNEL
IGNITION IGBT
DESCRIPTION
The UTC UGV3040 is an N-channel ignition Insulated Gate
Bipolar Transistor. It uses UTC’s advanced technology to provide
customers with outstanding SCIS capability.
The UTC UGV3040 is suitable for Coil –On plug applications and
Automotive Ignition Coil driver circuits, etc.
FEATURES
* Outstanding SCIS capability
* Logic level gate drive
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
C
C
C
C
C
3
E
E
E
E
E
UGV3040L-TA3-T
UGV3040L-TF3-T
UGV3040L-TN3-R
UGV3040L-TQ2-T
UGV3040L-TQ2-R
UGV3040G-TA3-T
UGV3040G-TF3-T
UGV3040G-TN3-R
UGV3040G-TQ2-T
UGV3040G-TQ2-R
TO-220
TO-220F
TO-252
TO-263
TO-263
G
G
G
G
G
Tube
Tube
Tape Reel
Tube
Tape Reel
Note: Pin Assignment: G: Gate
C: Collector
E: Emitter
UGV3040L-TA3-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(2) TA3: TO-220, TF3: TO-220F, TN3: TO-252
TQ2: TO-263
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R219-011.G
UGV3040
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCER
RATINGS
UNIT
V
Collector to Emitter Breakdown Voltage
450
Emitter to Collector Voltage Reverse Battery Condition
BVECS
30
V
TJ=25°C, ISCIS=14.2A, L=3.0mHy
300
mJ
mJ
A
At Starting
ESCIS
TJ= 150°C, ISCIS=10.6A, L=3.0mHy
170
TC=25°C
21
Continuous Collector Current
IC
TC=110°C
17
A
Gate to Emitter Voltage Continuous
VGEM
±10
V
TO-220/TO-263
TO-220F
125
Power Dissipation Total at TC=25°C
W
41.6
TO-252
125
PD
TO-220/TO-263
TO-220F
1
Power Dissipation Derating TC>25°C
W/°C
0.332
TO-252
1
Electrostatic Discharge Voltage at 100pF, 1500Ω
Junction Temperature
ESD
TJ
4
kV
°C
°C
-40 ~ +175
-40 ~ +175
Storage Temperature Range
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
1.0
UNIT
°C/W
TO-220/TO-252
TO-263
Junction to Case
θJC
TO-220F
3.0
UNISONIC TECHNOLOGIES CO., LTD
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QW-R219-011.G
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UGV3040
Insulated Gate Bipolar Transistor
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Off State Characteristics
IC=2mA, VGE=0V, RG=1KΩ,
TJ=-40~150°C
Collector to Emitter Breakdown Voltage
BVCER
BVCES
350 400 450
400 450 500
V
V
IC=10mA, VGE=0V, RG=0,
TJ=-40~150°C
Collector to Emitter to Breakdown Voltage
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
BVECS IC=-75mA, VGE=0V, TC=25°C
BVGES IGES=±2mA
30
V
V
±12 ±14
V
CER=250V,
TC=25°C
TC=150°C
TC=25°C
TC=150°C
25
µA
mA
mA
mA
Ω
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
ICER
IECS
RG=1KΩ
1
1
40
VEC=24V
Series Gate Resistance
Gate to Emitter Resistance
On State Characteristics
R1
R2
70
10K
26K
Ω
IC=6A, VGE=4V
TC=25°C
1.25 1.60
1.40 1.80
1.90 2.20
V
V
V
Collector to Emitter Saturation Voltage
VCE(SAT)
IC=10A, VGE=4.5V TC=150°C
IC=15A, VGE=4.5V TC=150°C
Dynamic Characteristics
Gate Charge
QG(ON) IC=10A, VCE=12V, VGE=5V
VGE(TH) IC=1.0mA, VCE=VGE
17
2.2
3.0
nC
V
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
Switching Characteristics
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time Inductive
1.3
VGEP
IC=10A, VCE=12V
V
td(ON)R
trR
td(OFF)L
tfL
0.48
2.1
4
7
μs
μs
μs
μs
VCE=14V, RL=1ꢀ, VGE=5V,
RG=1Kꢀ, TJ=25°C
1.4 15
2.2 15
TJ= 25°C, L=3.0mHy, RG=1Kꢀ,
Self Clamped Inductive Switching
SCIS
300 mJ
VGE=5V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R219-011.G
www.unisonic.com.tw
UGV3040
Insulated Gate Bipolar Transistor
TEST CIRCUIT AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R219-011.G
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