UHE4913_11 [UTC]
LOW POWER HALL EFFECT SWITCH; 低功耗霍尔效应开关型号: | UHE4913_11 |
厂家: | Unisonic Technologies |
描述: | LOW POWER HALL EFFECT SWITCH |
文件: | 总5页 (文件大小:160K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UHE4913
Preliminary
CMOS IC
LOW POWER HALL EFFECT
SWITCH
DESCRIPTION
3
UHE4913 is a low-power integrated Hall switch designed to
1
sense the applied magnetic flux density and give a digital output,
which indicates the present condition of the magnitude sensed.
It is mainly designed for battery-powered system and
hand-held equipment, such as cellular flip-phones and PDA’s, in
which power consumption is one major concern. The typical power
consumption of UHE4913 is down to 10μW in 2.7V supply.
The output will be at the “High” level when no magnetic field is
applied. When the applied magnetic flux density is stronger than
the switching threshold, the output would be at the “Low” level.
2
SOT-23
FEATURES
* Micropower Operation
* 2.4V to 5.5V Battery Operation
* Switching for both poles of magnet
* Offset Canceling Technology
* Superior Temperature Stability
* Extremely Low Switch-Point Drift
* Insensitive to Physical Stress
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
Halogen Free
1
2
I
3
UHE4913L-AE3-R
UHE4913G-AE3-R
O
G
Tape Reel
Note: O: Output, I: VDD, G: Gnd
UHE4913L-AE3-R
(1) Packing Type
(2) Package Type
(3) Lead Free
(1) R:Tape Reel
(2) AE3:SOT-23
(3) G:Halogen Free, L: Lead Free
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-608.a
UHE4913
Preliminary
CMOS IC
MARKING INFORMATION
PIN CONFIGURATION
PIN DESCRIPTION
PIN NAME
PIN TYPE
PIN DESCRIPTION
VOUT
VDD
O
I
Digital Output
Power Supply
Ground
GND
G
Note: O=Output, I=Power Supply, G=Ground
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-608.a
www.unisonic.com.tw
UHE4913
Preliminary
CMOS IC
BLOCK DIAGRAM
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UHE4913
Preliminary
CMOS IC
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
5.5
UNIT
V
Supply Voltage
Supply current
VDD
IQ
-1 ~ +2.5
Unlimited
150
mA
mT
°C
Magnetic Flux Density
Junction Temperature
Operation Temperature
Storage Temperature
B
TJ
TOPR
TSTG
-40 ~ +85
-40 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RECOMMENDED OPERATING CONDITIONS (TA=25°C)
PARAMETER
Supply Voltage
SYMBOL
VDD
CONDITIONS
Operating
MIN
2.4
TYP
2.7
2.7
25
MAX
5.5
5.5
85
UNIT
V
Output Voltage
VOUT
TA
-0.3
-40
V
Ambient Temperature
°C
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
VSAT
IOFF
CONDITIONS
DD=2.7V
MIN
TYP
0.1
0.01
1.1
2.5
3
MAX
20
UNIT
V
Output Saturation Voltage
Output Leakage Current
V
μA
mA
μA
μA
μs
IDD(EN)
IDD(DIS)
IDD(AVG)
TOP
Supply Current
VDD=2.7V
VDD=2.7V
Operating Time
Standby Time
Duty Cycle
50
TSD
130
0.04
0.5
0.1
ms
%
D.C.
tR
Output Rise Time
Output Fall Time
RL=2.7KΩ,CL=10PF
RL=2.7KΩ,CL=10PF
1
1
μs
tF
μs
MAGNETIC CHARACTERISTICS ( TA=25°C,VDD=2.7V)
PARAMETER
Operation Points
SYMBOL
MIN
20
12
2
TYP
35
27
8
MAX
UNIT
Gauss
|BOP
|
|
50
42
16
Release Points
Hysteresis
|BRP
|BOP–BRP
|
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-608.a
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UHE4913
Preliminary
CMOS IC
TYPICAL APPLICATION CIRCUIT
MAGNETIC FLUX
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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