UML2502G-AE3-R [UTC]
N-CHANNEL POWER MOSFET; N沟道功率MOSFET型号: | UML2502G-AE3-R |
厂家: | Unisonic Technologies |
描述: | N-CHANNEL POWER MOSFET |
文件: | 总4页 (文件大小:219K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UML2502
Power MOSFET
N-CHANNEL POWER MOSFET
DESCRIPTION
The UML2502 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) < 45mΩ@VGS = 4.5V
* RDS(ON) < 80mΩ@VGS = 2.5V
* Ultra Low Gate Charge (Max. 12nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 66pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free Plating
Halogen Free
1
2
3
UML2502L-AE3-R UML2502G-AE3-R
S
G
D
Tape Reel
MARKING
www.unisonic.com.tw
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-227.B
UML2502
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
20
±12
V
Continuous Drain Current VGS=4.5V
Pulsed Drain Current (Note 2)
Maximum Power Dissipation
Linear Derating Factor
4.2
A
IDM
33
A
1.25
W
PD
0.01
W/℃
℃
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
75 ~ 100
UNIT
℃/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250μA
VGS=0V, VDS=16V
VGS=±12V, VDS=0V
20
V
1.0
µA
IGSS
±100 nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25℃, ID=1mA
0.01
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=4.5V, ID=4.2A
0.6
1.2
45
80
V
35
50
Drain-Source On-State Resistance (Note)
mΩ
VGS=2.5V, ID=3.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
740
90
pF
pF
pF
V
GS=0V, VDS=15V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
Turn-ON Rise Time
66
tD(ON)
tR
tD(OFF)
tF
7.5
10
ns
ns
VDS=10V, RG=6ꢀ, RD=10ꢀ,
ID=1.0A
Turn-OFF Delay Time
Turn-OFF Fall-Time
54
ns
26
ns
Total Gate Charge (Note)
Gate Source Charge
QG
8.0
1.8
1.7
12
2.7
2.6
nC
nC
nC
V
GS=5.0V, VDS=10V,
QGS
QGD
ID=4.0A
Gate Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
VGS=0V, IS=1.3A, TJ=25℃
Diode Forward Voltage
VSD
ISM
IS
1.2
33
V
A
A
(Note)
Maximum Pulsed Drain-Source Diode
Forward Current
Maximum Continuous Drain-Source Diode
Forward Current
1.3
Reverse Recovery Time
tRR
IF=1.3A, dI/dt=100A/μs,
TJ=25℃(Note)
16
24
13
ns
Reverse Recovery Charge
QRR
8.6
nC
Notes: Pulse width ≤ 300μs; duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-227.B
www.unisonic.com.tw
UML2502
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
Switching Time Waveforms
1200
1000
VDS
90%
800
600
10%
400
VGS
tD(ON)
tD(OFF)
200
0
tF
tR
200
400
600
0
800
Source to Drain Voltage,VSD (mV)
UNISONIC TECHNOLOGS O., LTD
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www.unisonic.com.tw
QW-R502-227.B
UML2502
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-227.B
www.unisonic.com.tw
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