UMZ1N [UTC]
GENERAL PURPOSE TRANSISTOR;
| 型号： | UMZ1N |
| 厂家： | 
Unisonic Technologies |
| 描述： | GENERAL PURPOSE TRANSISTOR |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UMZ1N
Preliminary
DUAL TRANSISTOR
GENERAL PURPOSE
TRANSISTOR
DESCRIPTION
The UTC UMZ1N is a dual transistor, including an NPN
transistor and
a PNP transistor. It uses UTC’s advanced
technology to provide customers with high DC current gain, etc.
FEATURES
* High DC current gain (NPN: hFE>120 @ VCE=6V, IC=1mA;
PNP: hFE>120 @ VCE=-6V,IC=-1mA)
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-363
Packing
Lead Free
Halogen Free
UMZ1NG-AL6-R
1
2
3
4
5
6
UMZ1NL-AL6-R
E1 B1 C2 E2 B2 C1 Tape Reel
MARKING
6
5
Z1N
2
4
L: Lead Free
G: Halogen Free
1
3
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1 of 3
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R218-024.a
UMZ1N
Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
LIMITS
PARAMETER
SYMBOL
UNIT
TR1
60
TR2
-60
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
V
V
50
-50
7
-6
V
0.15
-0.15
A
Collector Power Dissipation
Junction Temperature
Storage Temperature
Pc
0.15
150
W
°C
°C
TJ
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
IC=50µA
60
50
7
V
V
V
IC=1mA
IE=50µA
VCB=60V
VEB=7V
0.1
0.1
0.4
560
µA
µA
V
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
VCE(SAT) IC/IB=50mA/5mA
hFE
fT
VCE=6V, IC=1mA
120
VCE=12V, IE=-2mA, f=100MHz
VCB=12V, IE=0A, f=1MHz
180
2
MHz
pF
Output Capacitance
Cob
3.5
TR2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-60V
VEB=-6V
-60
-50
-6
V
V
V
-0.1
-0.1
-0.5
560
µA
µA
V
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
VCE(SAT) IC/IB=-50mA/-5mA
hFE
fT
VCE=-6V, IC=-1mA
120
VCE=-12V, IE=2mA, f=100MHz
VCB=-12V,IE=0A, f=1MHz
140
4.0
MHz
pF
Output Capacitance
Cob
5.0
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R215-002,C
UMZ1N
Preliminary
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R218-024,a
www.unisonic.com.tw
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