UN1066L-TN3-R [UTC]
HIGH SPEED SWITCHING TRANSISTOR; 高速开关晶体管
| 型号： | UN1066L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH SPEED SWITCHING TRANSISTOR |
| 文件： | 总5页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UN1066
NPN SILICON TRANSISTOR
HIGH SPEED SWITCHING
TRANSISTOR
FEATURES
* Low VCE(SAT) voltage, up to 3A
* Suitable for fast switching applications
* High current gain
*Pb-free plating product number: UN1066L
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
B
B
B
2
C
C
C
3
E
E
E
UN1066-AB3-R
UN1066-TN3-R
UN1066-TN3-T
UN1066L-AB3-R
UN1066L-TN3-R
UN1066L-TN3-T
SOT-89
TO-252
TO-252
Tape Reel
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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UN1066
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
Collector-to-Base Voltage
SYMBOL
BVCBO
BVCEO
BVEBO
IC
RATINGS
UNIT
V
20
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
15
V
5
V
6
9
A
Collector Current (Pulse)
Base Current
ICP
A
IB
600
mA
W
℃
℃
Collector Dissipation(TC=25℃)
Junction Temperature
Storage Temperature
PC
3.5
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
20
15
6
TYP
MAX UNIT
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
BVCBO IC=10μ A, IE=0
BVCEO IC=1mA, RBE=∞
BVEBO IE=10μA, IC=0
V
V
V
IC=1.5A, IB=30mA
VCE(SAT)
180
300
1.2
0.1
0.1
mV
mV
V
Collector-to-Emitter Saturation Voltage
IC=3A, IB=60mA
Base-to-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
VBE(SAT) IC=1.5A, IB=30mA
ICBO
IEBO
hFE
fT
VCB=12V, IE=0
µA
µA
VEB=4V, IC=0
VCE=0.5V, IC=5A
VCE=2V, IC=500mA
VCB=10V, f=1MHz
Refer to Test Circuit
Refer to Test Circuit
Refer to Test Circuit
250
100
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
MHz
pF
ns
Cob
tON
tSTG
tF
50
50
Storage Time
250
25
ns
Fall Time
ns
UNISONIC TECHNOLOGIES CO., LTD
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UN1066
NPN SILICON TRANSISTOR
TEST CIRCUIT
IB1
IB2
PW=20µs
D.C.≤1%
OUTPUT
INPUT
RB
RL
VR
50Ω
100µF
470µF
VCC=5V
VBE=-5V
20IB1=-20IB2=IC=1.5A
UNISONIC TECHNOLOGIES CO., LTD
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UN1066
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
VCE(SAT) vs. IC
1000
6
IC/IB=50
Ta=25°C
4
2
100
6
4
2
10
5
0.01
0.1
1.0
10
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
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UN1066
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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