UN1596 [UTC]
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR; NPN硅平面中功率高增益晶体管
| 型号： | UN1596 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 文件： | 总2页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UN1596
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN
TRANSISTOR
DESCRIPTION
The UTC UN1596 are series of NPN silicon planar transistor,
which has gain of 500 at IC=100mA.It can be used in such
applications: battery powered circuit and darlington replacement.
FEATURES
* Gain :500 @ IC=100mA
* Low saturation voltage
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-223
Packing
Lead Free
Halogen Free
UN1596G-AA3-R
1
2
3
UN1596L-AA3-R
B
C
E
Tape Reel
www.unisonic.com.tw
1 of 2
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R207-021.b
UN1596
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
180
180
V
5
V
0.5
A
Peak Pulse Current
ICM
1
2
A
Collector Power dissipation
Junction Temperature
Storage Temperature
TA=25°С
PC
W
°С
°С
TJ
+150
TSTG
−55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
VBE(ON)
ICBO
TEST CONDITIONS
IC=100μA
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base-Emitter Turn-On Voltage
Collector Cutoff Current
180
180
5
V
V
IC=10mA
IE=100μA
V
IC=200mA, VCE=5V
VCB=140V
VEB=4V
0.9
100
100
V
nA
nA
Emitter Cutoff Current
IEBO
ON CHARACTERISTICS
IC=50mA, IB=0.5mA
IC=100mA, IB=2mA
IC=250mA, IB=5mA
IC=20mA, IB=5mA
IC=100mA, VCE=5V
IC=200mA, VCE=5V
0.2
0.2
V
V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.25
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
VBE(SAT)
hFE
0.9
500
150
SMALL-SIGNAL CHARACTERISTICS
Transition Frequency
fT
IC=50mA, VCE=5V, f=50MHz
VEB=0.5V, f=1MHz
70
MHz
pF
Input Capacitance
Output Capacitance
CI
CO
200
6
VCB=10V, f=1MHz
pF
tON
tOFF
IC=100mA, IB1=10mA
IB2=10mA, VCC=50V
80
Switching Times
ns
4400
Note: Pulse width=300μs. Duty cycle≦2%
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R207-021.b
www.unisonic.com.tw
相关型号：
UN1596-AA3-R
Power Bipolar Transistor, 0.5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
UTC
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