UP1496G-AE3-R [UTC]

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR; PNP硅平面高压晶体管


型号：	UP1496G-AE3-R
厂家：	Unisonic Technologies
描述：	PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR PNP硅平面高压晶体管晶体晶体管高压局域网
文件：	总3页 (文件大小：111K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UP1496

Preliminary

PNP SILICON TRANSISTOR

PNP SILICON PLANAR HIGH

VOLTAGE TRANSISTOR

DESCRIPTION

The UTC UP1496 are series of PNP silicon planar transistors

which have gain of 500 at I_C=100mA. It can be used in such

applications like battery powered circuits and darlington

replacements.

SOT-23

ORDERING INFORMATION

Pin Assignment

Ordering Number

UP1496G-AE3-R

Package

SOT-23

Packing

Tape Reel

MARKING

U96G

www.unisonic.com.tw

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UP1496

Preliminary

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

-220

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

-200

-5

-0.3

Peak Pulse Current

I_CM

-1

Base Current

I_B

-200

°С

Collector Dissipation (T_a=25°С)

Junction Temperature

Storage Temperature

P_C

500

T_J

+150

-55 ~ +150

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_a=25°С, unless otherwise specified)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C=-100 µA

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

-220

-200

-5

I_C=-10 mA (Note)

I_E=-100 µA

V_CB=-200 V

-100 nA

Emitter Cutoff Current

I_EBO

V_EB=-4 V

Collector -Emitter Cut-off Current

I_CES

V_CES=-200 V

V_CE=-10V , I_C=-1mA

V_CE=-10V , I_C=-100mA (Note)

V_CE=-10V , I_C=-250mA (Note)

100

DC Current Transfer Ratio

h_FE

300

V_CE=-10V , I_C=-400mA (Note)

Base-Emitter Turn-On Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_BE(ON)

V_CE(SAT)

V_BE(SAT)

V_CE=-10V , I_C=-250 mA (Note)

I_C=-100mA, I_B=-10mA

I_C=-250mA, I_B=-25mA (Note)

V_CE=-10V , I_C=-50mA, f=100MHz

-0.9

-0.2

-0.35

-1.0

Transition Frequency

Output Capacitance

f_T

C_OB

150

MHz

V_CB=-10V, f=1MHz

Note:

Measured under pulse conditions. Pulse width=300µs. Duty cycle≤2%.

UNISONIC TECHNOLOGIES CO., LTD

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UP1496

Preliminary

PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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