UP1855G-X-AA3-R [UTC]
HIGH CURRENT TRANSISTOR; 高电流晶体管
| 型号： | UP1855G-X-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH CURRENT TRANSISTOR |
| 文件： | 总4页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP1855
PNP SILICON TRANSISTOR
HIGH CURRENT TRANSISTOR
FEATURES
* High current switching
* Low VCE(SAT)
* High hFE
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-223
Packing
Lead Free
Halogen Free
UP1855G-x-AA3-R
1
2
3
UP1855L-x-AA3-R
B
C
E
Tape Reel
www.unisonic.com.tw
1 of 4
Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R207-011.G
UP1855
PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
ICM
RATINGS
UNIT
V
-180
Collector-Emitter Voltage
Emitter-Base Voltage
-140
V
-6
V
Peak Pulse Current
-10
A
Continuous Collector Current
Power Dissipation (Ta = 25°C ) (Note 2)
Junction Temperature
IC
-4
3
A
PD
W
°C
°C
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with
copper equal to 4 square inch minimum
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCBO IC = -100µA
BVCEO IC = -10mA
-180 -210
-140 -170
V
V
BVEBO IE = -100µA (Note)
-6
-8
V
VCB=-150V
ICBO
-50
-1
nA
µA
nA
mV
mV
mV
Collector Cut-off Current
Emitter Cut-off Current
VCB=-150V, Ta=100°C
IEBO
VEB=-6V
-10
-60
-120
IC=-100mA, IB=-5mA (Note)
IC=-500mA, IB=-50mA (Note)
IC=-1A, IB=-100mA (Note)
-30
-70
Collector-Emitter Saturation Voltage
VCE (SAT)
-110 -150
-275 -550
IC=-3A, IB=-300mA (Note)
mV
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE (SAT) IC=-3A, IB=-300mA (Note)
VBE (ON) VCE=-5V , IC=-3A (Note)
-970 -1110 mV
-830 -950
200
mV
hFE1
hFE2
hFE3
hFE4
VCE=-5V , IC=-10mA (Note)
VCE=-5V , IC=-1A (Note)
VCE=-5V , IC=-3A (Note)
VCE=-5V , IC=-10A (Note)
VCE=-10V , IC=-100mA, f=50MHz
VCB=-20V, f=1MHz
100
100
28
300
DC Current Gain
140
10
Transition Frequency
Output Capacitance
fT
110
MHz
pF
Cob
tON
40
VCC=-50V, IC=-1A
68
ns
Switching Times
tOFF
IB1=-100mA, IB2=100mA
1030
ns
Note: Pulse test: tP ≤300µs, Duty cycle ≤2%
CLASSIFICATION OF hFE3
RANK
A
B
RANGE
28~75
75(MIN.)
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R207-011.G
UP1855
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R207-011.G
UP1855
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW-R207-011.G
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