UP2790_15 [UTC]
SWITCHING N- AND P-CHANNEL POWER MOSFET;
| 型号： | UP2790_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | SWITCHING N- AND P-CHANNEL POWER MOSFET 开关 |
| 文件： | 总5页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP2790
Preliminary
Power MOSFET
SWITCHING N- AND
P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UP2790 uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use in Motor Drive application..
FEATURES
*
Low on-state resistance:
N-channel: VGS =10V, ID=3A: RDS(ON) = 28 mΩ (MAX)
V
GS=4.5V, ID=3A: RDS(ON) = 40 mΩ (MAX)
P-channel: VGS= -10V, ID=-3A: RDS(ON) = 60 mΩ (MAX)
GS=-4.5V, ID=-3A: RDS(ON) = 80 mΩ (MAX)
V
*
Low input capacitance
N-channel : CISS with 500 pF (Typ.)
P-channel : CISS with 460 pF (Typ.)
Built-in gate protection diode
Halogen Free
*
*
SYMBOL
(5,6)
D2
(7,8)
D1
(4)
G2
(2)
G1
S2(3)
S1(1)
P MOS
N MOS
ORDERING INFORMATION
Ordering Number
UP2790G-S08-R
Package
SOP-8
Packing
Tape Reel
www.unisonic.com.tw
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R502-339.a
UP2790
Preliminary
Power MOSFET
PIN CONFIGURATION
Drain 1
Drain 1
1
Source 1
Gate 1
8
7
2
3
4
Source 2
Drain 2
Drain 2
6
5
Gate 2
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UP2790
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified)
N-Channel
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain to Source Voltage (VGS=0V)
Gate to Source Voltage (VDS=0V)
Continuous Drain Current
30
±20
V
±6
A
Pulsed Drain Current (Note 2)
Single Avalanche Current (Note 3)
Single Avalanche Energy (Note 3)
Power Dissipation (Note 4)
Junction Temperature
IDM
±24
A
IAS
6
A
EAS
PD
3.6
mJ
W
°C
°C
1.7
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
P-Channel
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-30
UNIT
V
Drain to Source Voltage (VGS=0V)
Gate to Source Voltage (VDS=0V)
Drain Current (DC)
±20
V
±6
A
Pulsed Drain Current (Note 2)
Single Avalanche Current (Note 3)
Single Avalanche Energy (Note 3)
Power Dissipation (Note 4)
Junction Temperature
IDM
±24
A
IAS
-6
A
EAS
PD
3.6
mJ
W
°C
°C
1.7
TJ
150
Storage Temperature
TSTG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10 μs, Duty Cycle≤1%
3. Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
1
L = 0.1mH, VDD =
x VDSS, RG = 25 Ω, Starting TJ = 25°C
4.
2
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UP2790
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
N-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
VDS =30 V, VGS =0 V
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
IDSS
IGSS
10
µA
VGS = ±16 V, VDS=0 V
±10 µA
VGS(TH)
RDS(ON)
VDS =10V, ID =1mA
VGS =10 V, ID =3 A
VGS =4.5 V, ID =3 A
VGS =4.0 V, ID =3 A
1.5
2.5
V
21
28
34
28 mΩ
40 mΩ
53 mΩ
Static Drain-Source On-State
Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
500
135
77
pF
pF
pF
V
DS =10 V, VGS =0 V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
9.2
8.8
28
ns
ns
VDD=15V, VGS=10 V
ID=3 A, RG=10 Ω
Turn-OFF Delay Time
Fall-Time
ns
7.4
12.6
1.7
3.8
ns
Total Gate Charge
QG
nC
nC
nC
VDD =24 V, VGS =10 V, ID =6 A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
tRR
IS = 6 A, VGS =0V (Note)
0.85
18
V
ns
nC
I
DS = 6 A, VGS=0V, dI/dt=100A/μs
Reverse Recovery Charge
QRR
11
P-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
IDSS
IGSS
VDS =-30 V, VGS =0 V
VGS = ±16 V, VDS=0 V
-10 µA
±10 µA
VGS(TH)
RDS(ON)
VDS =-10V, ID =-1mA
VGS =-10 V, ID =-3 A
VGS =-4.5 V, ID =-3 A
VGS =-4.0 V, ID =-3 A
-1.0
-2.5
V
43
58
60 mΩ
80 mΩ
Static Drain-Source On-State
Resistance (Note)
65 110 mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
460
130
77
pF
pF
pF
V
DS =-10 V, VGS =0 V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
8.5
4.8
42
ns
ns
VDD=-15V, VGS=-10 V
ID=-3 A , RG=10 Ω,
Turn-OFF Delay Time
Turn-OFF Fall-Time
ns
19
ns
Total Gate Charge
QG
11
nC
nC
nC
VDD =-24 V, VGS =-10 V, ID =-6 A
Gate Source Charge
Gate Drain Charge
QGS
QGD
1.7
3.3
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UP2790
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note: Pulsed
VSD
tRR
IS = 6 A, VGS =0V (Note)
0.92
21
V
ns
nC
IDS = 6 A, VGS=0V, dI/dt=100A/μs
QRR
12
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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