UP672G-AL6-R [UTC]
N-CHANNEL MOSFET ARRAY FOR SWITCHING; N沟道MOSFET阵列切换
| 型号： | UP672G-AL6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL MOSFET ARRAY FOR SWITCHING |
| 文件： | 总4页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP672
Preliminary
Power MOSFET
N-CHANNEL MOSFET ARRAY
FOR SWITCHING
4
5
6
DESCRIPTION
3
The UTC UP672 includes two MOSFET devices in a SOT-363
package. It achieves high-density mounting and saves mounting
costs.
2
1
SOT-363
FEATURES
* Automatic mounting supported
SYMBOL
(3)
D2
(6)
D1
(5)
G2
(2)
G1
S2
(4)
S1
(1)
N-Channel
N-Channel
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-363
Packing
Lead Free
Halogen Free
1
2
3
4
5
6
UP672L-AL6-R
UP672G-AL6-R
S1 G1 D2 S2 G2 D1 Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-504.a
UP672
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
50
±7.0
V
Continuous
100
mA
mA
mW
°C
Drain Current
Pulsed (Note 1)
IDM
200
Total Power Dissipation
Channel Temperature
PD
200
TCH
150
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
1. PW ≤ 10ms, Duty Cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
50
V
VDS=50V, VGS=0V
VDS=0V ,VGS=7.0V
10
5.0
-5.0
µA
µA
µA
Forward
Reverse
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=-7.0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(OFF) VDS=3.0V, ID=1.0µA
RDS(ON)1 VGS=2.5V, ID=10mA
RDS(ON)2 VGS=4.0V, ID=10mA
0.7
20
1.0
20
15
1.5
40
20
V
Ω
Drain-Source On-State Resistance
Ω
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
|yFS|
VDS=3.V, ID=10mA
mS
CISS
COSS
CRSS
6
8
pF
pF
pF
VDS=3.0V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
1.2
tD(ON)
tR
tD(OFF)
tF
9
ns
ns
ns
ns
Turn-ON Rise Time
VDD=3V,ID=20mA, VGS(ON)=3V,
RG=10Ω, RL=120Ω
50
20
40
Turn-OFF Delay Time
Turn-OFF Fall Time
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-504.a
www.unisonic.com.tw
UP672
Preliminary
Power MOSFET
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-504.a
www.unisonic.com.tw
UP672
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 3
QW-R502-504.a
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明