UPS1622 [UTC]
HIGH PERFORMANCE CURRENT MODE POWER SWITCH; 高性能电流模式电源开关
| 型号： | UPS1622 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH PERFORMANCE CURRENT MODE POWER SWITCH |
| 文件： | 总6页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UPS1622
LINEAR INTEGRATED CIRCUIT
HIGH PERFORMANCE
CURRENT MODE POWER
SWITCH
DESCRIPTION
The UTC UPS1622 is an integrated PWM controller and Power
MOSFET specifically designed for current mode operation with
minimal external components. The UTC UPS1622 is designed to
provide several special enhancements to satisfy the needs, for
example, Power-Saving mode for low standby power (<0.3W),
Frequency Hopping , Constant Output Power Limiting , Over
Current Protection (OCP), Over Voltage Protection (OVP), Under
Voltage Lock Out (UVLO), and Over Temperature Protection
(OTP) etc. IC will be shutdown or can auto-restart in certain
situations.
DIP-8
FEATURE
* Internal High Voltage Start-up Circuit
* Internal High Voltage Power MOSFET (650V)
* Lower than 0.3W Standby Power Design
* Gate Output Maximum Voltage Clamp(15V)
* Over temperature protection
* Over voltage protection
* Leading edge blanking
* Cycle-by-Cycle current limiting
* Under Voltage Lock Out
ORDERING INFORMATION
Ordering Number
Lead Free
Package
DIP-8
Packing
Tube
Halogen Free
UPS1622G-D08-T
UPS1622L-D08-T
UPS1622L-D08-T
(1) T: Tube
(2) D08: DIP-8
(3) G: Halogen Free, L: Lead Free
(1) Packing Type
(2) Package Type
(3) Lead Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
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UPS1622
LINEAR INTEGRATED CIRCUIT
PIN CONFIGURATION
1
Drain
Drain
8
7
GND
GND
2
3
4
6
5
FB
Drain
Drain
VCC
PIN DESCRIPTION
PIN NO.
1、2
3
PIN NAME
GND
DESCRIPTION
Ground
Feedback
FB
4
VCC
Supply voltage
5~8
Drain
Power MOSFET drain
BLOCK DIAGRAM
VCC
4
8
7
6
5
Drain
Drain
Drain
Drain
UVLO
Reference voltage
OTP
1/2
GND
OVP
Driver
Latch
Q
Q
S
R
Oscillator
Burst
mode
LEB
PWM&OCP
COMP
0.23v
R2=230
R1=1K
3
FB
Notes: OTP (Over Temperature Protection)
OVP (Over Voltage Protection)
OCP (Over Current Protection)
UVLO (Under Voltage Latch-Out)
LEB (Led Edge Blanking)
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UPS1622
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDS(SW)
VCC
RATINGS
650
UNIT
V
Switching Drain Source Voltage
Supply Voltage
30
V
Feedback Current
IFB
3
mA
°C
°C
°C
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-40 ~ +125
-50 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
OPERATING RANGE
PARAMETER
SYMBOL
VCC
RATINGS
8.6 ~ 22
UNIT
V
Supply Voltage
ELECTRICAL CHARACTERISTICS (TA＝25°C, VCC=15V, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
SUPPLY SECTION
Start Up Charge Current
ICH
IST
IOP
VDS=100V, VCC=0~VCCON
VCC = VCCON-0.2V
1
mA
μA
Start Up Current
22
45
6.5
Supply Current with switch
UNDER-VOLTAGE LOCKOUT SECTION
Start Threshold Voltage
IFB=0.5mA, ID=50mA
4.5
mA
VCCON
13.5
7.5
14.2
8.2
15
9
V
V
Min. Operating Voltage
VCCOFF
INTERNAL VOLTAGE REFERENCE
Reference Voltage
VREF
Guarantee by design
6.3
6.5
6.7
V
CONTROL SECTION
IFB to ID Current Gain
GFB-D
IFBSD
RFB
560
900
1200
0.94
1.05
60
Feedback Source Shutdown Current
FB Pin Input Impedance
μA
Ω
Burst-Mode Out FB Voltage
Burst-Mode Enter FB Voltage
Normal initial Switching frequency
Frequency Deviation VS VCC
Frequency Deviation VS Temperature
PROTECTION SECTION
OVP threshold
VFB(OUT)
VFB(IN)
F(SW)
FDV
V
V
54
66
5
kHz
%
VCC=10 to 22V
FDT
TA =-40 to 105°C
5
%
VOVP
28
V
OTP threshold
T(THR)
130
150
170
°C
CURRENT LIMITING SECTION
Peak Current Limitation
ILIM
VFB=0V
0.56
0.7
0.84
A
Minmum Turn On Time
tON(MIN)
680
nS
POWER MOSFET SECTION
Drain-Source Breakdown Voltage
Turn-on voltage between gate and source
Off State Drain Current
VDSS
VTH
VFB=2V, ID=250μA
VDS=VGS, ID=250μA
VDS=500V, VFB=2V
VGS=10V,ID=0.4A
650
2
V
V
4
IDSS
100
14
uA
ꢀ
Static Drain-Source On-State Resistance
RDS(ON)
12
45
VDD =300V, ID =4.0A
Rise Time
tR
100
80
ns
RG=25ꢀ (Note 1, 2)
Fall Time
tF
35
40
ns
Drain Capacitance
COSS
VDS=25V
pF
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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UPS1622
LINEAR INTEGRATED CIRCUIT
FUNCTIONAL DESCRIPTION
The internal reference voltages and bias circuit work at VCC> VTHD(ON), and shutdown at VCC<VCC(MIN)
.
(1) High Voltage Start up switch Circuit
At startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor
connected to the VCC pin. When VCC reaches VTHD (ON), the IC begins switching and the internal high-voltage current
source is disabled. The IC continues its normal switching operation and the power is supplied from the auxiliary
transformer winding unless VCC goes below the stop voltage of VCC(MIN)
.
(2) Switching Frequency Limit
The UTC UPS1622 have a constant switching frequency of 60kHz.
(3) Protection section
The IC takes on more protection functions such as OVP and OTP etc. In case of those failure modes for
continual blanking time, the driver is shut down. At the same time, IC enters auto-restart, VCC power on and driver is
reset after VCC power on again.
OVP
OVP will shutdown the switching of the power MOSFET whenever VCC>VOVP. The OVP case as followed Fig. 1
the test circuit as followed Fig. 2.
VCC
33n
15V
15V VDD
470u
33n
470u
500Ω
IC3
8
7
1
2
Drain
UTC
UPS1622
3
4
6
5
VOVP
VCC
Fig.1 OVP case
Fig.2 OVP test circuit
OTP
OTP will shut down driver and latch-off when junction temperature TJ>T (THR), and IC will be release on when
temperature decreasing under T (THR)-30 and powering on again.
(4) The Gain of FB pin to Drain Current Limiting
ILIM=GFB-D*0.23V*(R2||R1)
(5) Driver Output Section
The driver-stage drives the gate of the MOSFET and is optimized to minimize EMI and to provide high circuit
efficiency. This is done by reducing the switch on slope when reaching the MOSFET threshold. This is achieved by a
slope control of the rising edge at the driver’s output. The output driver is clamped by an internal 15V Zener diode in
order to protect power MOSFET transistors against undesirable gate over voltage.
(6) Inside power MOSFET
Specific Power MOSFET parameter is as “Power MOSFET SECTION” in electrical characteristics table.
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UPS1622
LINEAR INTEGRATED CIRCUIT
TYPICAL APPLICATION CIRCUIT
YC1
T1
C9
R7
L2
F1
1
7
LINE
12V/1.0A
BD1
B6S
4
1
3
D3
D1
2
C1
L1
C2
C4
C5
C12
C8
GND
NEUT
R1
10
5
2
3
D2
C3
IC1
R8
R11
R9
IC2
R5
4
3
1
2
C11
R12
C6
UTC
UPS1622
IC3
R10
Fig. 3 UTC UPS1622 Typical Application Circuit
Table1. Components reference description for UTC UPS1622 application circuit
DESIGNATOR PART TYPE DESIGNATOR PART TYPE DESIGNATOR PART TYPE
C1
C2
10μF/400V
10μF/400V
22μF/50V
470μF/16V
220μF/16V
334pF
R1
R5
100Kꢀ
6.8Kꢀ
30ꢀ
D1
D2
FR107
RS1D
C3
R7
D3
SR39
C4
R8
1.8Kꢀ
510ꢀ
IC1
IC2
IC3
YC1
T1
UPS1622
PC-817
TL431
C5
R9
C6
R10
R11
R12
3.92Kꢀ
15Kꢀ
4.7Kꢀ
C8
102pF/1KV
102pF/100V
104pF
102pF/400V
EE-19
C9
C11
C12
L1
1mH
104pF
L2
2μH
F1
1A/250V
B6S
BD1
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UPS1622
LINEAR INTEGRATED CIRCUIT
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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