US112S [UTC]
Suitable to fit all modes of control Found in applications such as Overvoltage crowbar protection; 适用于符合控制所有模式中的应用发现，如过压保护电路保护
| 型号： | US112S |
| 厂家： | 
Unisonic Technologies |
| 描述： | Suitable to fit all modes of control Found in applications such as Overvoltage crowbar protection |
| 文件： | 总4页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC US112S/N
SCR
SCRs
DESCRIPTION
The UTC US112S/N is suitable to fit all modes of
control found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits.
1
TO-220
1: CATHODE
SYMBOL
2: ANODE
3: GATE
ABSOLUTE MAXIMUM RATINGS
RATING
US112S US112N
UNIT
PARAMETER
Repetitive peak off-state voltages
US112S/N-4
VDRM
VRRM
400
600
800
12
V
US112S/N-6
US112S/N-8
RMS on-state current (180° conduction angle) (Tc = 105°C)
Average on-state current (180° conduction angle) (Tc = 105°C)
Non repetitive surge peak on-state current (Tj = 25°C)
tp=8.3ms
IT(RMS)
IT(AV)
ITSM
A
A
8
146
140
98
A
tp=10ms
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr ≤ 100 n s, F = 60 Hz , Tj = 125°C,)
I²t
A²S
dI/dt
50
4
A/µs
Peak gate current (tp=20µs, Tj = 125°C)
Maximum peak reverse gate voltage
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
IGM
VRGM
PG(AV)
Tstg
Tj
A
V
W
°C
°C
5
1
-40 ~ +150
-40 ~ +125
Operating junction temperature range
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
UTC US112S/N
SCR
UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
MAX.
200
0.8
PARAMETER
SYMBOL
TEST CONDITIONS
VD = 12 V, RL =140Ω
VD = 12 V, RL=140Ω
MIN
UNIT
µA
V
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
IGT
VGT
VGD
VD = VDRM, RL = 3.3 kΩ, RGK = 1kΩ
0.1
8
V
Tj = 125°C
Reverse gate voltage
Holding Current
VRG
IH
IRG = 10 µA
V
mA
mA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA ,RGK = 1 kΩ
5
6
Latching Current
IL
dV/dt
Circuit Rate Of Change Of
VD = 67 % VDRM ,RGK = 220 Ω
5
V/µs
V
V
mΩ
off-state Voltage
Tj = 125°C
On-state voltage
ITM = 24A, tp = 380 µs, Tj = 25°C
VTM
1.6
0.85
30
Tj = 125°C
Tj = 125°C
Vt0
Threshold Voltage
Rd
Dynamic Resistance
Off-state Leakage Current
VDRM = VRRM, RGK = 220 Ω
IDRM
IRRM
µA
5
2
Tj = 25°C
mA
Tj = 125°C
UTC US112N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
MAX.
15
PARAMETER
SYMBOL
TEST CONDITIONS
VD = 12 V, RL =33Ω
MIN
2
UNIT
mA
V
Gate trigger Current
Gate trigger Voltage
IGT
VGT
1.3
VD = 12 V, RL=33Ω
Gate non-trigger voltage
VD = VDRM, RL = 3.3 kΩ ,Tj = 125°C
VGD
0.2
V
Holding Current
IT = 500 mA, Gate open
IG = 1.2 IGT
VD = 67 % VDRM , Gate open, Tj = 125°C
IH
IL
dV/dt
30
60
mA
mA
Latching Current
Circuit Rate Of Change Of
200
V/µs
off-state Voltage
On-state voltage
VTM
Vt0
Rd
1.6
V
V
mΩ
ITM = 24A, tp = 380 µs, Tj = 25°C
Tj = 125°C
Tj = 125°C
0.85
Threshold Voltage
Dynamic Resistance
30
Off-state Leakage Current
VDRM = VRRM,
Tj = 25°C
IDRM
IRRM
µA
5
2
mA
Tj = 125°C
THERMAL RESISTANCES
PARAMETER
SYMBOL
Rth(j-c)
Rth(j-a)
VALUE
1.3
60
UNIT
KW
Junction to case (DC)
Junction to ambient
K/W
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
UTC US112S/N
SCR
Figure.2:Average and D.C. on-state current
Figure.1:Maximum average power
vs case temperature
dissipation vs average on-state current.
P(W)
12
IT(av)(A)
14
11 α=180°
DC
12
10
10
9
8
α=180°
7
6
5
8
6
4
2
4
360°
3
2
α
1
IT(av)(A)
Tcase(℃)
0
0
12
5
25
50
0
75
100
0
2
3
4
5
6
7
8
9
1
Fig.3-2:Relative variation of thermal impedance
junction to ambient vs pulseduration (recommended
pad layout,FR4 PC board)
Fig.3-1:Relative variation of thermal impedance
junction to case vs pulse duration.
K=<Zth(j-a)/Rth(j-a)>
1.00
K=<Zth(j-c)/Rth(j-c)>
1.0
0.5
0.10
0.01
0.2
0.1
tp(s)
1E+0
tp(s)
1E+0
1E-3
1E-2
1E-1
5E+2
1E-2
1E-1
1E+1
1E+2
Figure.4-1:Relative variation of gate trigger
current,holding current and latching vs
junction temperature (US112S)
Figure.4-2: Relative variation of gate trigger
current,holding current and latching current vs
junction temperature (US112N).
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.0
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.4
1.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
IGT
IGT
1.2
1.0
0.8
IH&IL
Rgk=1kΩ
IH&IL
0.6
0.4
0.2
0.0
Tj(℃)
Tj(℃)
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
UTC US112S/N
SCR
Figure.5:Relative variation of holding current vs
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US112S)
gate-cathode resistance(typical values)
(US112S)
IH(Rgk)/IH(Rgk=1kΩ)
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
5.0
4.5
10.0
1.0
Ta=25℃
Tj=125℃
VD=0.67* VDRM
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Rgk(kΩ)
Rgk(Ω)
0.4
0.1
01.0E-2
1E-1
1E+0
0.0
1.2
0.2
0.6
0.8
1.0
1E+1
Fig.8: Surge peak on-state current vs number of cycles
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode capacitance(typical values) (US112S)
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
10.0
4.0
3.5
Tj=125℃
VD=0.67* VDRM
Tj=125℃
VD=0.67* VDRM
Rgk=220Ω
3.0
2.5
2.0
1.0
1.5
1.0
0.5
0.0
Rgk(Ω)
Cgk(nF)
0.1
0.0
1.2
0.2
0.4
0.6
0.8
1.0
0
150
25
50
75
100
125
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
values of I2t.
Fig.10: On-state characteristics(maximum values).
2
ITSM(A),I t(A2s)
ITSM
2000
1000
200
100
Tjinitial=25℃
ITSM
Tj=max:
Vto=0.85V
Rd=30mΩ
US112N
US112S
I2t
dI/dt
limitation
Tj=Tjmax.
US112N
US112S
10
1
100
10
Tj=25℃
VTM(V)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
tp(ms)
0.0
0.5
0.01
0.10
1.00
10.00
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-013,B
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