UT06P03G-AB3-R [UTC]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式型号: | UT06P03G-AB3-R |
厂家: | Unisonic Technologies |
描述: | P-CHANNEL ENHANCEMENT MODE |
文件: | 总5页 (文件大小:291K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT06P03
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
1
DESCRIPTION
The UT06P03 is P-Channel Power MOSFET, designed
with high density cell with fast switching speed, ultra low
on-resistance, excellent thermal and electrical capabilities.
SOT-89
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
UT06P03G-AB3-R
Package
SOT-89
Packing
1
2
3
G
D
S
Tape Reel
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-156.B
UT06P03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
-30
±20
Continuous Drain Current
Pulsed Drain Current (Note 1, 2)
Total Power Dissipation
Junction Temperature
-4
A
IDM
-20
PD
0.78
W
℃
℃
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MAX
160
18
UNIT
℃/W
Junction-to-Ambient
Junction-to-Case
θJC
℃/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS VGS =0 V, ID =-250µA
-30
V
IDSS
IGSS
VDS =-24V, VGS =0 V
VDS =0 V, VGS = ±20V
1
µA
nA
±100
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =-250 µA
-0.9 -1.5
60
-3
V
75
VGS =-4.5V, ID =-3A
RDS(ON)
Drain-Source On-State Resistance (Note 2)
mΩ
VGS =-10V, ID =-4A
37
45
DYNAMIC PARAMETERS
Input Capacitance
CISS
530
135
70
VDS =-15V, VGS =0V, f=1MHz
pF
Output Capacitance
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
5.7
10
18
5
VGS=-10V,VDS=-15V,RG=6ꢀ,
ns
ID=-1A
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
QG
10
2.2
2
14
V
DS=0.5BVDSS, VGS =-10V,
nC
QGS
QGD
ID =-4A
Gate-Drain Charge
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Body-Diode Continuous Current
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
VSD
IS
IF = -1A, VGS = 0V
-1.2
-2.1
V
A
ISM
-4
Reverse Recovery Time
tRR
15.5
7.9
ns
IF=-4 A, dIF/dt=100A/μs
Recovery Charge
QRR
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board.
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QW-R502-156.B
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UT06P03
Power MOSFET
TYPICAL CHARACTERISTICS
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UT06P03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
P(pk)
0.1
t1
0.05
t2
θJA(t)=r(t)×RθJA
θJA=160℃/W
0.02
0.01
R
R
0.01
TJ-TA=P×RθJA(t)
Duty Cycle,D=t1/t2
Single Pulse
0.001
0.001
0.0001
10
100
0.01
0.1
Time,t1 (ms)
1
1000
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UT06P03
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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