UT06P03G-AB3-R [UTC]

P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
UT06P03G-AB3-R
型号: UT06P03G-AB3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

P-CHANNEL ENHANCEMENT MODE
P沟道增强模式

文件: 总5页 (文件大小:291K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
UT06P03  
Power MOSFET  
P-CHANNEL  
ENHANCEMENT MODE  
1
„
DESCRIPTION  
The UT06P03 is P-Channel Power MOSFET, designed  
with high density cell with fast switching speed, ultra low  
on-resistance, excellent thermal and electrical capabilities.  
SOT-89  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Pin Assignment  
Ordering Number  
UT06P03G-AB3-R  
Package  
SOT-89  
Packing  
1
2
3
G
D
S
Tape Reel  
www.unisonic.com.tw  
1 of 5  
Copyright © 2010 Unisonic Technologies Co., Ltd  
QW-R502-156.B  
UT06P03  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
-30  
±20  
Continuous Drain Current  
Pulsed Drain Current (Note 1, 2)  
Total Power Dissipation  
Junction Temperature  
-4  
A
IDM  
-20  
PD  
0.78  
W
TJ  
+150  
-55 ~ +150  
Storage Temperature  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MAX  
160  
18  
UNIT  
/W  
Junction-to-Ambient  
Junction-to-Case  
θJC  
/W  
„
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
BVDSS VGS =0 V, ID =-250µA  
-30  
V
IDSS  
IGSS  
VDS =-24V, VGS =0 V  
VDS =0 V, VGS = ±20V  
1
µA  
nA  
±100  
Gate Threshold Voltage  
VGS(TH) VDS =VGS, ID =-250 µA  
-0.9 -1.5  
60  
-3  
V
75  
VGS =-4.5V, ID =-3A  
RDS(ON)  
Drain-Source On-State Resistance (Note 2)  
mΩ  
VGS =-10V, ID =-4A  
37  
45  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
530  
135  
70  
VDS =-15V, VGS =0V, f=1MHz  
pF  
Output Capacitance  
COSS  
CRSS  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Turn-ON Delay Time (Note 2)  
Turn-ON Rise Time  
tD(ON)  
tR  
tD(OFF)  
tF  
5.7  
10  
18  
5
VGS=-10V,VDS=-15V,RG=6,  
ns  
ID=-1A  
Turn-OFF Delay Time  
Turn-OFF Fall Time  
Total Gate Charge (Note 2)  
Gate-Source Charge  
QG  
10  
2.2  
2
14  
V
DS=0.5BVDSS, VGS =-10V,  
nC  
QGS  
QGD  
ID =-4A  
Gate-Drain Charge  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Body-Diode Continuous Current  
Maximum Pulsed Drain-Source Diode  
Forward Current (Note 1)  
VSD  
IS  
IF = -1A, VGS = 0V  
-1.2  
-2.1  
V
A
ISM  
-4  
Reverse Recovery Time  
tRR  
15.5  
7.9  
ns  
IF=-4 A, dIF/dt=100A/μs  
Recovery Charge  
QRR  
nC  
Notes: 1. Pulse width limited by TJ(MAX)  
2. Pulse width 300us, duty cycle 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-156.B  
www.unisonic.com.tw  
UT06P03  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R502-156.B  
www.unisonic.com.tw  
UT06P03  
Power MOSFET  
„
TYPICAL CHARACTERISTICS(Cont.)  
Transient Thermal Response Curve  
1
D=0.5  
0.2  
0.1  
P(pk)  
0.1  
t1  
0.05  
t2  
θJA(t)=r(t)×RθJA  
θJA=160/W  
0.02  
0.01  
R
R
0.01  
TJ-TA=P×RθJA(t)  
Duty Cycle,D=t1/t2  
Single Pulse  
0.001  
0.001  
0.0001  
10  
100  
0.01  
0.1  
Time,t1 (ms)  
1
1000  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R502-156.B  
www.unisonic.com.tw  
UT06P03  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-156.B  
www.unisonic.com.tw  

相关型号:

UT06P03G-AG6-R

P-CHANNEL POWER MOSFET
UTC

UT06P03G-TN3-R

P-CHANNEL POWER MOSFET
UTC

UT06P03L-TN3-R

P-CHANNEL POWER MOSFET
UTC

UT06P03_15

P-CHANNEL POWER MOSFET
UTC

UT07104PH01

Circular Connector, 4 Contact(s), Zinc Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
AMPHENOL

UT07104PH6

Circular Connector, 4 Contact(s), Zinc Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
AMPHENOL

UT07128PH01

Circular Connector, 8 Contact(s), Zinc Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
AMPHENOL

UT07128PH6

Circular Connector, 8 Contact(s), Zinc Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
AMPHENOL

UT07128PH601

Circular Connector, 8 Contact(s), Zinc Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
AMPHENOL

UT07128SH

Circular Connector, 8 Contact(s), Zinc Alloy, Female, Crimp Terminal, Receptacle, ROHS COMPLIANT
AMPHENOL

UT071412PH

Circular Connector, 12 Contact(s), Zinc Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
AMPHENOL

UT071412SH6

Circular Connector, 12 Contact(s), Zinc Alloy, Female, Crimp Terminal, Receptacle, ROHS COMPLIANT
AMPHENOL