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UT100N04L-TN3-R [UTC]

Power Field-Effect Transistor,;
UT100N04L-TN3-R
型号： UT100N04L-TN3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Field-Effect Transistor,
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UNISONIC TECHNOLOGIES CO., LTD  
UT100N04  
Power MOSFET  
100A, 40V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC UT100N04 is an N-channel power MOSFET using  
UTC’s advanced technology to provide customers with  
a
minimum on-state resistance and superior switching performance.  
The UTC UT100N04 is generally applied in low power  
switching mode power appliances and electronic ballast.  
FEATURES  
* RDS(ON) ≤ 4.8mΩ @ VGS=10V, ID=50A  
DS(ON) ≤ 6.5mΩ @ VGS=4.5V, ID=50A  
R
* High Switching Speed  
* Improved dv/dt capability  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
G
G
S
2
D
D
S
3
S
S
S
4
-
5
-
6
-
7
-
8
-
TO-220  
TO-252  
Tube  
UT100N04L-TA3-T  
UT100N04L-TN3-R  
UT100N04G-K08-5060-R  
UT100N04G-TA3-T  
UT100N04G-TN3-R  
Tape Reel  
-
-
-
-
-
UT100N04G-K08-5060-R DFN5060-8  
G
D
D
D
D Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 9  
Copyright © 2019 Unisonic Technologies Co., Ltd  
QW-R209-321.A  
UT100N04  
Power MOSFET  
MARKING  
TO-220 / TO-252  
DFN5060-8  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 9  
QW-R209-321..A  
www.unisonic.com.tw  
UT100N04  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
40  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current  
Pulsed Drain Current (Note 2)  
Avalanche Energy  
100  
A
IDM  
200  
A
Single Pulsed (Note 3)  
EAS  
254  
mJ  
V/ns  
W
Peak Diode Recovery dv/dt  
dv/dt  
1.56  
73  
TO-220  
Power Dissipation (TC=25°C)  
Junction Temperature  
PD  
TO-252  
52  
W
DFN5060-8  
56  
W
TJ  
+150  
-55 ~ +150  
°C  
°C  
Operation and Storage Temperature  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by maximum junction temperature.  
3. L=0.1mH, IAS=71.4A, VDD=25V, RG=20Ω, Starting TJ=25°C  
4. ISD ≤ 100A, VDS=0V, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
TO-220  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJA  
TO-252  
110  
DFN5060-8  
TO-220  
40.3 (Note)  
1.7  
θJC  
TO-252  
1.47 (Note)  
2.23 (Note)  
DFN5060-8  
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 9  
QW-R209-321..A  
www.unisonic.com.tw  
UT100N04  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS VGS=0V, ID=250μA  
40  
V
IDSS  
VDS=40V, VGS=0V  
VGS=20V, VDS=0V  
VGS=-20V, VDS=0V  
1
μA  
nA  
Forward  
Reverse  
100  
Gate-Source Leakage Current  
IGSS  
-100 nA  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH) VDS=VGS, ID=250μA  
1.0  
3.0  
4.8  
6.5  
V
VGS=10V, ID=50A  
RDS(ON)  
mΩ  
mΩ  
Static Drain-Source On-State Resistance  
VGS=4.5V, ID=50A  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
CISS  
5276  
594  
pF  
pF  
pF  
V
GS=0V, VDS=25V, f=1MHz  
DS=20V, VGS=10V, ID=100A  
Output Capacitance  
COSS  
CRSS  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Total Gate Charge  
463  
QG  
QGS  
QGD  
tD(ON)  
tR  
120  
10  
22  
18  
20  
80  
29  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
Gate-Source Charge  
Gate-Drain Charge  
IG=1mA (Note1,2)  
Turn-On Delay Time  
Turn-On Rise Time  
VDS=20V, VGS=10V, ID=100A,  
RG=3Ω (Note1,2)  
Turn-Off Delay Time  
tD(OFF)  
tF  
Turn-Off Fall Time  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Maximum Continuous Drain-Source Diode  
Forward Current  
IS  
100  
A
A
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
200  
1.4  
Drain-Source Diode Forward Voltage  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
VSD  
trr  
IS=100A, VGS=0V  
IS=50A, VGS=0V,  
dIS/dt=100A/µs  
V
44.4  
26  
ns  
nC  
Qrr  
Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  
2. Essentially independent of operating temperature.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 9  
QW-R209-321..A  
www.unisonic.com.tw  
UT100N04  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 9  
QW-R209-321..A  
www.unisonic.com.tw  
UT100N04  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
VGS  
Same Type  
as D.U.T.  
QG  
VDS  
QGS  
QGD  
VGS  
DUT  
Charge  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 9  
QW-R209-321..A  
www.unisonic.com.tw  
UT100N04  
Power MOSFET  
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 9  
QW-R209-321..A  
www.unisonic.com.tw  
UT100N04  
Power MOSFET  
TYPICAL CHARACTERISTICS (Cont.)  
6
UNISONIC TECHNOLOGIES CO., LTD  
8 of 9  
QW-R209-321..A  
www.unisonic.com.tw  
UT100N04  
Power MOSFET  
TYPICAL CHARACTERISTICS (Cont.)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONIC TECHNOLOGIES CO., LTD  
9 of 9  
QW-R209-321..A  
www.unisonic.com.tw  

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