UT131-6 [UTC]
TRIAC, 600V V(DRM), 1A I(T)RMS,;
| 型号： | UT131-6 |
| 厂家： | 
Unisonic Technologies |
| 描述： | TRIAC, 600V V(DRM), 1A I(T)RMS, 栅 三端双向交流开关 栅极 |
| 文件： | 总5页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC UT131
TRIAC
TRIACS LOGIC LEVEL
DESCRIPTION
Passivated, sensitive gate triaces in a plastic envelope,
intended for use in general purpose bidirectional switching
and phase control applications. These devices are
intended to be interfaced directly to microcontrollers. logic
integrated circuits and other low power gate trigger circuits.
1
SYMBOL
MT2
TO-92
G
1:MT1 2:GATE 3:MT2
MT1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltage
UT131-5
UT131-6
UT131-8
500*
600*
800*
VDRM
V
A
RMS On-State Current
IT(RMS)
ITSM
I2t
1
Full Sine Wave; Tlead≤51°C
Non-Repetitive Peak On-State Current
(Full Sine Wave; Tj=25°C prior to surge)
A
t=20ms
16
17.6
t=16.7ms
Circuit Fusing
1.28
A2s
t=10ms
Repetitive Rate of Rise of On-State Current after Triggering
ITM=1.5A, IG=0.2A, dIG/dt=0.2A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
50
50
50
10
dIT/dt
A/µs
Peak Gate Voltage
Peak Gate Current
VGM
IGM
5
2
V
A
Peak Gate Power
PGM
PG(AV)
Tj
5
0.5
125
-40~150
W
W
°C
°C
Average Gate Power (over any 20ms period)
Operating Junction Temperature
Storage temperature
Tstg
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-006,C
UTC UT131
TRIAC
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch
to the on-state. The rate of rise of current should not exceed 3 A/µs.
THERMAL RESISTANCES
PARAMETER
Thermal Resistance Junction to Lead
Full Cycle
SYMBOL
Rth j-lead
MIN
TYP
150
MAX
UNIT
K/W
60
80
Half Cycle
Thermal Resistance junciton to Ambient
(PCB mounted ;lead length=4mm)
Rth j-lead
K/W
STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER
Gate Trigger Current
SYMBOL
TEST CONDITIONS
VD=12V, IT=0.1A
MIN TYP MAX UNIT
T2+ G+
T2+ G-
T2- G-
T2- G+
0.4
1.3
1.4
3.8
3
3
5
7
IGT
mA
Latching Current
VD=12V, IGT=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
1.2
4.0
1.0
2.5
1.3
1.2
0.7
0.3
0.1
5
8
IL
mA
5
8
5
1.5
1.5
Holding Current
On-State Voltage
Gate Trigger Voltage
IH
VT
VD=12V, IGT=0.1A
mA
V
V
V
mA
IT=2.0A
VD=12V, IT=0.1A
VD=400V, IT=0.1A, Tj=125°C
VD=VDRM(max), Tj=125°C
VGT
ID
0.2
Off-state Leakage Current
0.5
DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise specified)
PARAMETER
Critical Rate of Rise of off-state
Voltage
SYMBOL
dVD/dt
TEST CONDITIONS
MIN TYP MAX UNIT
VDM=67% VDRM(max), Tj=125°C
5
15
V/µs
Exponential waveform,RGK=1kΩ
Gate Controlled Turn-on Time
ITM=1.5A,VD=VDRM(max), IG=0.1A
dIG/dt=5A/µs
tgt
2
µs
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-006,C
UTC UT131
TRIAC
TYPICAL CHARACTERISTICS
Figure 1.Maximum on -state Dissipation.Ptot vs RMS On-
Figure 4.Maximum Permissible RMS Current IT(RMS)
vs Lead Temperature Tlead
IT(RMS)/A
state Current,IT(RMS),Whereα =conduction Angle.
Tsp(max)/C
Ptot/W
1.4
1.2
104
107
1.2
108℃
α =180
1
α
1
0.8
0.6
0.4
110
α =120
α =90
α
0.8
113
116
119
α =60
0.6
0.4
α =30
0.2
0
0.2
0
122
125
0
0.4
0.6
0.8
-50
50
Tsp/℃
100
150
0
0.2
1
1.2
IT(RMS)/A
Figure 2. Maximum Permissible Non-repetitive
Peak On-state Current ITSM,vs Pulse Width
tp,for Sinusoidal Currents,tp≤ 20ms
Figure 5.Maximum Permissible Repetitive RMS on-state
Current IT(RMS),vs Surge Duration,for Sinusoidal
Currents,f=50Hz;Tlead≤ 51℃
ITSM/A
IT(RMS)/A
1000
3
ITSM
time
IT
2.5
2.0
Tj initial=25℃max
100
10
1.5
1
dIT/dt limit
T2-G+ quadrant
100us
0.5
0
1ms
T/s
10ms
100ms
10us
0.1
1
10
0.01
Surge Duration /S
Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/
Figure 3 .Maximum Permissible Non-Repetitive
peak on-state Current ITSM,vs Number of Cycles,
VGT(25℃),vs Junction Temperature Tj
VGT(Tj)
VGT(25℃)
for Sinusoidal Currents,f=50Hz
ITSM/A
1.6
12
10
8
ITSM
time
IT
1.4
1.2
Tj initial=25℃max
1
6
4
0.8
0.6
0.4
2
0
0
-50
50
Tj/℃
100
150
100
1
10
1000
Number of Cycles at 50Hz
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-006,C
UTC UT131
TRIAC
Figure 7.Normalised Gate Trigger current
IGT(Tj)/IGT(25℃),vs Junction Temperature Tj
Figure 10.Typical and Maximum
On-state Characteristic
IGT(Tj)
IGT(25℃)
IT/A
2
3
T2+G+
T2+G-
T2-G-
T2-G+
Tj=125℃
Tj=25℃
2.5
2
1.5
typ
Vo=1.0V
Rs=0.21Ohms
1
1.5
1
max
0.5
0
.5
0
0.5
0
1
1.5
2
0
-50
50
100
150
VT/V
Tj/℃
Figure 8.Normalised Latching Current
IL(Tj)/IL(25℃),vs Junction Temperature Tj
Figure 11.Transient Thermal Impedance
Zth j-lead,vs Pulse W idth tp
Zth j-sp(K/W )
IL(Tj)
IL(25℃)
100
3
2.5
2
10
1
unidirectional
bidirectional
1.5
1
tp
PD
0.1
.5
0
t
0.01
1ms
10ms
tp/s
0.1s
1s
10s
10us 0.1ms
0
-50
50
100
150
Tj/℃
Figure 12.Typical Critical Rate of Rise of off-state Voltage,
dVD/dt vs Junction Temperature Tj
Figure 9.Normalised Holding Current
IH(Tj)/IH(25℃),vs Junction Temperature Tj
IH(Tj)
IH(25℃)
dVD/dt(V/us)
1000
3
2.5
2
100
10
1
1.5
1
.5
0
0
50
100
150
0
-50
50
Tj/℃
100
150
Tj/℃
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-006,C
UTC UT131
TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
5
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R401-006,C
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