UT16N10G-TA3-R [UTC]

Power Field-Effect Transistor,;


型号：	UT16N10G-TA3-R
厂家：	Unisonic Technologies
描述：	Power Field-Effect Transistor,
文件：	总9页 (文件大小：463K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UT16N10

POWER MOSFET

16A, 100V N-CHANNEL

POWER MOSFET

TO-251

TO-220



DESCRIPTION

The UTC UT16N10 is a N-channel mode power MOSFET

using UTC’s advanced technology to provide customers with a

minimum on-state resistance, low gate charge and high switching

speed.

The UTC UT16N10 is suitable for high voltage synchronous

rectifier and DC/DC converters, etc.



FEATURES

TO-252

DFN3030-8

* R_DS(ON)≤ 115 mΩ @ V_GS=10V, I_D=8.0A

R_DS(ON)≤ 135 mΩ @ V_GS=4.5V, I_D=8.0A

* High Switching Speed

* High Cell Density Trench Technology



SYMBOL

(5, 6, 7, 8) Drain

2.Drain

(4) Gate

1.Gate

3.Source

(1, 2, 3) Source

DFN3030-8

TO-220/TO-251/TO-252

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

TO-220

TO-251

TO-252

Tube

UT16N10L-TA3-R

UT16N10L-TM3-T

UT16N10L-TN3-R

UT16N10G-TA3-R

UT16N10G-TM3-T

UT16N10G-TN3-R

Tape Reel

UT16N10L-K08-3030-R UT16N10G-K08-3030-R DFN3030-8

Note: Pin Assignment: G: Gate

D: Drain

S: Source

UT16N10G-TA3-R

(1)Packing Type

(2)Package Type

(1) T: Tube, R: Tape Reel

(2) TA3: TO-220, TM3: TO-251, TN3: TO-252,

K08-3030: DFN3030-8

(3)Green Package

(3) G: Halogen Free and Lead Free, L: Lead Free

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UT16N10

Power MOSFET



MARKING

TO-220 / TO-251 / TO-252

DFN3030-8

UTC

UT16N10

L: Lead Free

G: Halogen Free

Date Code

16N10

Lot Code

Date Code

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UT16N10

Power MOSFET



ABSOLUTE MAXIMUM RATING (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

100

±20

Continuous

Drain Current

Pulsed (Note 2)

I_DM

Avalanche Energy (Note 3)

Single Pulsed (Note 3)

E_AS

V/nS

Peak Diode Recovery dv/dt (Note 4)

TO-220

dv/dt

2.6

Power Dissipation

TO-251/TO-252

DFN3030-8

P_D

17.9

+100

-55 ~ +100

Junction Temperature

T_J

°C

Storage Temperature Range

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=10mH, I_AS=3.0A, V_DD=50V, R_G= 25Ω, Starting T_J= 25°C

4. I_SD≤16A, di/dt ≤100A/µs, V_DD≤ V_(BR)DSS, T_J≤ 25°C



THERMAL DATA

PARAMETER

TO-220/TO-251

SYMBOL

RATINGS

110

UNIT

°C/W

TO-252

Junction to Ambient

θ_JA

DFN3030-8

TO-220

130

1.3

2.5

°C/W

Junction to Case (Note)

TO-251/TO-252

DFN3030-8

θ_JC

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

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UT16N10

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

100

1.0

V_DS=100V, V_GS=0V

V_GS=+20V, V_DS=0V

V_GS=-20V, V_DS=0V

µA

Forward

Reverse

+100 nA

-100 nA

Gate-Source Leakage Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=8.0A

V_GS=4.5V, I_D=8.0A

3.0

115 mΩ

135 mΩ

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

400

Output Capacitance

V_GS=0V, V_DS=25V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

Gate to Source Charge

Gate to Drain Charge

Turn-on Delay Time (Note 1)

Rise Time

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

2.5

V_DS=80V, V_GS=10V, I_D=16A

I_G=1mA (Note 1, 2)

V_DS=50V, V_GS=10V, I_D=16A,

R_G=25Ω (Note 1, 2)

Turn-off Delay Time

t_D(OFF)

t_F

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage (Note 1)

Reverse Recovery Time (Note 1)

I_S

I_SM

V_SD

t_rr

I_S=16A, V_GS=0V

I_S=16A, V_GS=0V,

dI/dt=100A/μs

1.4

Reverse Recovery Charge

Q_rr

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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UT16N10

Power MOSFET



TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

I_SD

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

V_GS

(Driver)

Period

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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Power MOSFET



TEST CIRCUITS AND WAVEFORMS

R_L

V_DS

90%

V_DD

V_GS

R_G

10%

V_GS

D.U.T.

t_D(ON)

t_D(OFF)

Pulse Width≤ 1μs

Duty Factor≤0.1%

t_F

t_R

Switching Test Circuit

Switching Waveforms

V_GS

Same Type

as D.U.T.

Q_G

V_DS

Q_GS

Q_GD

V_GS

DUT

Charge

Gate Charge Test Circuit

Gate Charge Waveform

V_DS

BV_DSS

I_AS

R_D

V_DD

I_D(t)

V_DS(t)

V_DD

D.U.T.

t_p

Time

t_p

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

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Power MOSFET



TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Voltage

Drain-Source On-Resistance vs.

Gate-Source Voltage

500

400

300

200

V_GS=5~10V

I_D=8A

16A

Note:

1.T_A=25°C

2.Pulse test

100

Note:

1.T_A=25°C

2.Pulse test

Drain-Source Voltage, V_DS(V)

Gate-Source Voltage, V_GS(V)

Capacitance Characteristics

Gate Charge Characteristics

1000

V_DS=80V

V_GS=10V

I_D=16A

Pulsed

CISS

100

COSS

CRSS

Drain-Source Voltage, V_DS(V)

Total Gate Charge, Q_G(nC)

Breakdown Voltage vs. Junction

Temperature

Drain-Source On-Resistance vs.

Junction Temperature

2.5

1.4

1.2

V_GS=10V

I_D=8A

Pulsed

I_D=0.25mA

Pulsed

1.5

0.5

0.8

100

125

150

100

125

150

Junction Temperature, T_J(°C)

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UT16N10

Power MOSFET



TYPICAL CHARACTERISTICS (Cont.)

Gate Threshold Voltage vs.

Junction Temperature

Source Current vs. Source-Drain

Voltage

1.1

I_D=0.25mA

Pulsed

T_A=150°C

25°C

0.9

0.8

0.7

0.6

0.1

1.2

0.7 0.8 0.9

1 1.1

0.3 0.4 0.5

100

125

150

0.6

Source-Drain Voltage, V_SD(V)

Junction Temperature, T_J(°C)

Drain Current vs. Gate-Source

Voltage

Drain-Source On-Resistance vs.

Drain Current

170

160

150

140

130

120

110

T_A=25°C

V_GS=10V

Pulsed

T_A=25°C

Pulsed

100

Drain Current, I_D(A)

Gate-Source Voltage, V_GS(V)

Power Dissipation vs. Junction

Temperature

Drain Current vs. Case Temperature

TO-252

100 125 150

100

125

150

Junction Temperature, T_J(°C)

Case Temperature, T_C(℃)

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UT16N10

Power MOSFET



TYPICAL CHARACTERISTICS (Cont.)

Safe Operating Area

MAX

Operation

in this area

is limited by

R_DS(ON)

100us

1ms

10ms

TO-252

T_J=150°C

T_C=25°C

Single Pulse

0.1

100

Drain-Source Voltage, V_DS(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all UTC products described or contained herein.

UTC products are not designed for use in life support appliances, devices or systems where malfunction

of these products can be reasonably expected to result in personal injury. Reproduction in whole or in

part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to

make changes to information published in this document, including without limitation specifications and

product descriptions, at any time and without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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UT16N10G-TA3-R [UTC]

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