UT2327_15 [UTC]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | UT2327_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2327
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC UT2327 is P-channel enhancement mode Power
MOSFET, designed in serried ranks. with fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number
UT2327G-AE3-R
Package
SOT-23
Packing
1
2
3
S
G
D
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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UT2327
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATING
- 20
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGS
± 12
V
TA=25°C
TA=70°C
-2.6
A
Continuous Drain Current (Note 3)
ID
-2.1
A
Pulsed Drain Current (Note 1, 2)
Total Power Dissipation (TA=25°C)
Junction Temperature
IDM
PD
-10
A
1.38
W
°C
°C
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
RATING
90
UNIT
°C/W
θJA
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V, ID=-250uA
-20
V
TJ=25°C
TJ=70°C
VDS=-20V, VGS=0V
-1
uA
uA
Drain-Source Leakage Current
VDS=-16V, VGS=0V
VGS=±12V
Reference to 25℃, ID=-1mA
-10
Gate-Source Leakage Current
IGSS
±100 nA
V/°C
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ
-0.1
4.4
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=-250uA
-0.5
V
130 mΩ
190 mΩ
S
VGS=-5V, ID=-2.8A
Drain-Source On-State Resistance (Note 2)
VGS=-2.8V, ID=-2.0A
VDS=-5V, ID=-2.8A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
295
170
65
pF
pF
pF
Output Capacitance
VGS=0V, VDS=-6V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
5.2
9.7
19
ns
ns
ns
ns
VDS=-15V, VGS=-10V,
ID=-1A, RG=6Ω, RD=15Ω
Turn-OFF Delay Time
Turn-OFF Fall Time
29
Total Gate Charge (Note 2)
Gate-Source Charge
QG
5.2
1.36
0.6
10
nC
nC
nC
QGS
QGD
VDS=-6V, VGS=-5V, ID=-2.8A
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
TJ=25℃, IS=-1.6A, VGS=0V
Drain-Source Diode Forward Voltage(Note2)
Maximum Continuous Drain-Source Diode
Forward Current
VSD
-1.2
-1
V
A
IS
VD=VG=0V, VS=-1.2V
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
-10
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min.
UNISONIC TECHNOLOGIES CO., LTD
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UT2327
Power MOSFET
TYPICAL CHARACTERISTICS
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
800
600
1.8
1.6
1.4
1.2
1
ID = -2.8A
GS = -5V
V
ID = -2A
TA =25℃
400
200
0
0.8
0.6
0
2
4
6
8
10
-50
0
50
100
150
Gate-to-Source Voltage, VGS (V)
Junction Temperature, Tj (℃)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
1.5
1.0
0.5
0.0
10
1
TJ=150℃
TJ =25℃
0
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-50
0
50
100
150
Source-to-Drain Voltage, VSD (V)
Junction Temperature, TJ (℃)
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UT2327
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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UT2327
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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