UT2N10G-TN3-R [UTC]
2 Amps,100 Volts N-CHANNEL POWER MOSFET; 2安培， 100伏特N沟道功率MOSFET
| 型号： | UT2N10G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2 Amps,100 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UT2N10
Preliminary
Power MOSFET
2 Amps,100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT2N10 is N-Channel enhancement mode silicon gate
power FET.it uses a special gate oxide designed to provide full rated
conductance at gate biases through 3V ~ 5V and facilitate true on-off
power control directly from logic circuit supply voltages.
The UTC UT2N10 is universally applied in logic level (5V) driving
sources, such as automotive switching, solenoid drivers and
programmable controllers.
FEATURES
* 2A, 100V
* RDS(ON) = 1.050Ω
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-252
Packing
Lead Free
Halogen Free
1
2
3
UT2N10L-TN3-R
UT2N10G-TN3-R
G
D
S
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
UNISONIC TECHNOLOGIES CO., LTD
1 of 3
QW-R502-511.a
www.unisonic.com.tw
UT2N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
VDGR
ID
RATINGS
UNIT
V
Drain-Source Voltage (Note 1)
Gate-Source Voltage
100
±10
V
Drain-Gate Voltage (RGS=1MΩ) (Note 1)
100
V
Continuous
Drain Current
2
A
Pulsed (Note 3)
IDM
5
A
Power Dissipation
PD
25
W
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
VDS = Rated BVDSS, VGS = 0V
100
V
1.0
25
Drain-Source Leakage Current
µA
V
V
DS = 0.8 x Rated BVDSS
GS = 0V, TC = 125°C
,
Forward
Reverse
VGS=+10V, VDS=0V
VGS=-10V, VDS=0V
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS(ON)
VDS=VGS, ID=250µA
VGS=5V, ID=2A
1.0
2.0
2.1
V
V
Drain-Source On Voltage (Note 2)
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=5V, ID=2A
1.050
ꢀ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
RθJC
200
80
35
5
pF
pF
V
GS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
SWITCHING PARAMETERS
Turn-ON Delay Time
pF
°C/W
tD(ON)
tR
tD(OFF)
tF
10
15
25
20
25
45
45
25
ns
ns
ns
ns
Rise Time
VDD=50V, ID=2A, RG=6.25ꢀ,
RL=25 ꢀ, VGS=5V
Turn-OFF Delay Time
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 2)
VSD
tRR
ISD=2A
1.4
V
Body Diode Reverse Recovery Time
Note: 1. TJ = 25°C ~ 125°C.
ISD=2A, dISD/dt=50A/µs
100
ns
2. Pulse test: pulse width≤300ms, duty cycle≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-511.a
www.unisonic.com.tw
UT2N10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
ton
td(on)
tOFF
td(OFF)
tr
tf
RL
VDS
90%
90%
RG
+
-
VDD
10%
10%
0
VGS
OUT
90%
50%
VGS
10%
50%
Pluse width
0
Resistive Switching Waveforms
Switching Time Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-511.a
www.unisonic.com.tw
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