UT3055G-TN3-R [UTC]

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型号：	UT3055G-TN3-R
厂家：	Unisonic Technologies
描述：	暂无描述
文件：	总2页 (文件大小：153K)
中文：	中文翻译
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UNISONIC TECHNOLOGIES CO., LTD

UT3055

Power MOSFET

12A, 25V N-CHANNEL

POWER MOSFET

DESCRIPTION

TO-252

TO-251

The UTC UT3055 is N-Channel logic level enhancement

mode field effect transistor.

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

UT3055-TM3-T

UT3055-TN3-R

UT3055-TN3-T

UT3055L-TM3-T

UT3055L-TN3-R

UT3055L-TN3-T

TO-251

TO-252

Tube

Tape Reel

Tube

www.unisonic.com.tw

1 of 2

QW-R502-158.Ba

UT3055

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Power Dissipation

±16

P_D

℃

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

℃

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

2.5

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS

BV_DSS

I_DSS

V_GS=0V, I_D=250uA

V_DS=16 V, V_GS=0 V

V_DS=0 V, V_GS= ±12V

µA

I_GSS

±100 nA

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250uA

V_GS=10V, I_D=5A

V_GS=4.5V, I_D=5A

1.1

mΩ

Drain-Source On-State Resistance (Note 2)

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

240

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Total Gate Charge

Q_G

3.2

0.8

V_GS=4.5V

Gate-Drain Charge

Q_GD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note2)

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

I_F=I_S, V_GS=0V

1.0

I_S

Notes: 1. Pulse width limited by T_J(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

2 of 2

QW-R502-158.Ba

www.unisonic.com.tw

相关型号：

UT3055G-TN3-T

Power Field-Effect Transistor, 12A I(D), 25V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3