UT4812ZG-S08-R [UTC]
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE; 30V , 6.9A双N沟道增强模式型号: | UT4812ZG-S08-R |
厂家: | Unisonic Technologies |
描述: | 30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE |
文件: | 总4页 (文件大小:148K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT4812Z
Power MOSFET
30V, 6.9A DUAL N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC UT4812Z can provide excellent RDS(ON) and low
gate charge by using advanced trench technology. The UTC
UT4812Z is suitable for using as a load switch or in PWM
applications.
FEATURES
* Low RDS(ON)
* Reliable and Rugged
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Package
Packing
Halogen Free
UT4812ZL-S08-R
UT4812ZL-S08-T
UT4812ZG-S08-R
UT4812ZG-S08-T
SOP-8
SOP-8
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
1 of 6
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-350.B
UT4812Z
Power MOSFET
PIN CONFIGURATION
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R502-350.B
www.unisonic.com.tw
UT4812Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
30
Gate-Source Voltage
±20
V
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 3)
Power Dissipation
6.9
A
IDM
30
2
A
PD
W
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ + 150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in 2 pad area, t ≤10sec
3. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
110
UNIT
Junction to Ambient
θJA
°C /W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS =0 V, ID =250µA
VDS =30V, VGS =0 V
VDS =0 V, VGS = ±20V
30
V
1
5
µA
µA
IGSS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS =VGS, ID =250 µA
VGS =10V, ID =6.9A
VGS =4.5V, ID =5.0A
1
1.9
3
V
22.5
34.5
28
42
mΩ
mΩ
Drain-Source On-State Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
680 820
102
pF
pF
pF
Output Capacitance
V
DS =15 V, VGS =0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
77
108
tD(ON)
tR
tD(OFF)
tF
4.6
4.1
7
ns
ns
6.2
30
7.5
VGS=10V, VDS=15V, RL=2.2ꢀ,
R
GEN =3ꢀ
Turn-OFF Delay Time
Turn-OFF Fall-Time
20.6
5.2
ns
ns
Total Gate Charge
QG
13.84 17
1.82
nC
nC
nC
Gate Source Charge
Gate Drain Charge
QGS
QGD
VDS =15V, VGS =10V, ID =6.9A
3.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note)
VSD
IS
IS=1A
0.76
1
3
V
A
Maximum Continuous Drain-Source
Diode Forward Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: Pulse width ≤300μs, duty cycle≤2%.
trr
IF=6.9 A, dI/dt=100A/μs
IF=6.9 A, dI/dt=100A/μs
16.5
7.8
20
10
ns
QRR
nC
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R502-350.B
www.unisonic.com.tw
UT4812Z
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
5
10 15 20 25 30 35 40
0
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
1.2
8
7
1.0
VGS=10V
ID=6.9A
6
5
0.8
0.6
0.4
0.2
0
4
3
VGS=4.5V
ID=5A
2
1
0
0
50
100
150
200
0.2
0.4
0.6
0.8 1.0 1.2
0
Drain to Source Voltage, VDS (mV)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R502-350.B
www.unisonic.com.tw
相关型号:
UT4822-S08-R
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
UTC
UT4822-S08-T
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
UTC
UT4822G-S08-R
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
UTC
UT4822L-S08-R
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
UTC
©2020 ICPDF网 联系我们和版权申明