UT50N06L-TN3-R [UTC]
Power Field-Effect Transistor,;
| 型号： | UT50N06L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT50N06
Power MOSFET
50A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UT50N06 is a N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
RDS(ON) and high switching speed.
1
TO-252
The UTC UT50N06 is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts,
etc.
FEATURES
* RDS(ON) ≤ 15 mΩ @ VGS=10V, ID=30A
RDS(ON) ≤ 18 mΩ @ VGS=4.5V, ID=30A
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
2
Package
TO-252
Packing
Lead Free
Halogen Free
UT50N06G-TN3-R
1
3
UT50N06L-TN3-R
G
D
S
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
UT50N06G-TN3-R
(1)Packing Type
(2)Package Type
(1) R: Tape Reel
(2) TN3: TO-252
(3) G: Halogen Free and Lead Free L: Lead Free
(3)Green Package
MARKING
UTC
UT50N06
L: Lead Free
G: Halogen Free
Date Code
Lot Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
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UT50N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
60
±20
V
Continuous (VGS=10V)
Pulsed (Note 2)
50
A
Drain Current
IDM
100
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
63
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
dv/dt
PD
1.7
50
Junction Temperature
TJ
+150
-55 ~ +175
°C
°C
Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=35.5A, VDD=25V, RG=25Ω, Starting TJ=25°С
4. ISD ≤ 50A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
110
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.5 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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UT50N06
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250µA
60
V
VDS=60V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
1
µA
Forward
Reverse
+200 nA
-200 nA
Gate- Source
Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1.0
3.0
V
VGS=10V, ID=30A
RDS(ON)
15 mΩ
18 mΩ
Static Drain-Source On-State Resistance
VGS=4.5V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
2350
165
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
125
QG
QGS
QGD
tD(ON)
tR
48
5.5
8
nC
nC
nC
ns
ns
ns
ns
VDS=48V, VGS=10V, ID=50A
IG=1mA (Note 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
8
16
36
18
VDD=30V, VGS=10V, ID=50A
RG=3Ω (Note 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
50
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
100
1.4
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 1)
Reverse Recovery Charge
VSD
trr
IS=50A,VGS=0V
V
55
74
ns
nC
IS=30A , VGS=0V di/dt=100A/μs
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
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UT50N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
IFM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UT50N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
VDS
QGS
QGD
VGS
DUT
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
VDS
90%
RG
RD
VDS
VGS
10%
VGS
DUT
tR
td(OFF)
td(ON)
tON
Resistive Switching Waveforms
tF
tOFF
Resistive Switching Test Circuit
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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UT50N06
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Voltage
Drain-Source On-Resistance vs.
Gate-Source Voltage
50
40
30
20
120
100
80
Note:
1.TA=25°C
2.Pulse test
4V
VGS=5~10V
60
50A
Note:
1.TA=25°C
2.Pulse test
40
20
0
ID=25A
3V
10
0
0
1
2
3
4
5
2
4
6
10
8
Drain-Source Voltage, VDS (V)
Gate-Source Voltage, VGS (V)
Capacitance Characteristics
Gate Charge Characteristics
10000
1000
12
10
8
VDS=48V
VGS=10V
ID=50A
Pulsed
CISS
6
4
2
0
COSS
CRSS
100
10
0
10
20
40
30
0
10
20
30
40
50
Drain-Source Voltage, VDS (V)
Total Gate Charge, QG (nC)
Breakdown Voltage vs. Junction
Temperature
Drain-Source On-Resistance vs.
Junction Temperature
2.5
2
1.4
1.2
ID=30A
Pulsed
ID=0.25mA
Pulsed
VGS=10V
1.5
1
VGS=4.5V
1
0.5
0
0.8
25
50
75
100
125
150
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
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UT50N06
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Gate Threshold Voltage vs.
Junction Temperature
Source Current vs. Source-Drain
Voltage
1.2
1
100
10
ID=0.25mA
Pulsed
TA=150°C
25°C
0.8
0.6
0.4
1
0.1
0.30.4 0.5
25
50
75
100
125
150
1.4
1.3
1.1 1.2
0.7 0.8 0.9 1
0.6
Source-Drain Voltage, VSD (V)
Junction Temperature, TJ (°C)
Drain Current vs. Gate-Source
Voltage
Drain-Source On-Resistance vs.
Drain Current
50
40
30
20
20
19
18
17
16
15
14
TA=25°C
Pulsed
TA=25°C
Pulsed
VGS=4.5V
VGS=10V
10
0
13
0
1
2
3
4
5
6
10
20
Drain Current, ID (A)
30
40
50
0
Gate-Source Voltage, VGS (V)
Power Dissipation vs. Junction
Temperature
Drain Current vs. Junction
Temperature
60
40
60
50
40
TO-252
30
20
10
0
20
0
0
25
50
75
100 125 150
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
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UT50N06
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Drain-Source On-Resistance vs.
Drain Current
Safe Operating Area
MAX
100us
2.5
2
100
10
TA=25°C
Pulsed
VGS=4.5V
1ms
DC
1.5
1
Operation in this
area is limited by
RDS(ON)
VGS=10V
10ms
1
TO-252
TJ=150°C
TC=25°C
0.1
0.01
0.5
0
Single Pulse
10
1
0.1
100
25
50
75
100
125
150
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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