UT60T03-TF3-R [UTC]

N-CHANNEL ENHANCEMENT MODE;
UT60T03-TF3-R
型号: UT60T03-TF3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

N-CHANNEL ENHANCEMENT MODE

文件: 总5页 (文件大小:251K)
中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UT60T03  
Power MOSFET  
N-CHANNEL  
ENHANCEMENT MODE  
„
DESCRIPTION  
The UT60T03 can provide excellent RDS(ON) and low gate  
charge by using UTC’s advanced trench technology.  
„
FEATURES  
* Very simple drive requirement  
* Very low gate charge  
* Fast switching  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
S
S
S
UT60T03-TF3-R  
UT60T03-TN3-R  
UT60T03-TN3-T  
UT60T03L-TF3-R  
UT60T03L-TN3-R  
UT60T03L-TN3-T  
TO-220F  
TO-252  
TO-252  
G
G
G
D
D
D
Tube  
Tape Reel  
Tube  
www.unisonic.com.tw  
1 of 5  
Copyright © 2010 Unisonic Technologies Co., Ltd  
QW-R502-183.B  
UT60T03  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS(TJ =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
V
V
A
A
Continuous Drain Current  
45  
Pulsed Drain Current (Note 2)  
IDM  
120  
TO-220F  
TO-252  
56  
Power Dissipation (TC=25°C)  
PD  
W
44  
Junction Temperature  
Strong Temperature  
TJ  
+150  
-55 ~ +175  
TSTG  
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2 .Pulse width limited by safe operating area.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
62.5  
UNIT  
TO-220F  
TO-252  
TO-220F  
TO-252  
Junction to Ambient  
Junction to Case  
θJA  
/W  
110  
2.66  
θJC  
/W  
3.4  
„
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Body Leakage Current  
BVDSS  
IDSS  
VGS =0 V, ID =250µA  
VDS =30V, VGS =0V  
VGS = ±20 V  
30  
1
V
1
µA  
IGSS  
±100 nA  
Reference to 25, ID=1mA  
V/  
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ  
0.026  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS =VGS, ID =250 µA  
VGS =10 V, ID =20 A  
VGS =4.5 V, ID =15 A  
3
V
12  
25  
Static Drain-Source On-Resistance(Note 1)  
mΩ  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
1135  
200  
V
DS = 25V, VGS = 0V,  
pF  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
135  
QG  
QGS  
QGD  
tD(ON)  
tR  
11.6  
3.9  
7
VDS = 20V, VGS = 4.5V,  
nC  
ns  
Gate Source Charge  
Gate Drain Charge  
ID =20 A (Note 1)  
Turn-ON Delay Time  
Turn-ON Rise Time  
8.8  
57.5  
18.5  
6.4  
VGS=10V, VDS=15V,  
RD=0.75, ID =20 A,  
RG =3.3 (Note 1)  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
tD(OFF)  
tF  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Forward On Voltage (Note 1)  
Reverse Recovery Time  
VSD  
tRR  
IS=45 A,VGS=0V  
IS=20 A, VGS=0 V,dI/dt=100  
A/μs  
1.3  
V
23.3  
16  
ns  
nC  
Reverse Recovery Charge  
QRR  
Note: 1.Pulse width 300us , duty cycle 2%.  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-183.B  
www.unisonic.com.tw  
UT60T03  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Typical Output Characteristics  
Typical Output Characteristics  
125  
100  
75  
50  
25  
0
90  
60  
30  
0
10V  
10V  
TC=25℃  
TC=150℃  
8.0V  
8.0V  
6.0V  
6.0V  
5.0V  
5.0V  
VG=4.0V  
1
2
3
4
0
1
2
3
4
5
0
Drain to Source Voltage,VDS (V)  
Drain to Source Voltage,VDS (V)  
Normalized On-Resistance vs.  
Junction Temperature  
On-Resistance vs. Gate Voltage  
80  
60  
40  
20  
0
2
ID=20A  
TC=25  
ID=20A  
VG=10V  
1.6  
1.2  
0.8  
0.4  
3
5
9
11  
-50  
25  
100  
175  
7
Gate-to-Source Voltage,VGS (V)  
Junction Temperature,TJ ()  
UNISOIC TECHNOLOIECO., LTD  
3 of 5  
W-R502-183.B  
www.unisonic.com.tw  
UT60T03  
Power MOSFET  
„
TYPICAL CHARACTERISTICS(Cont.)  
Effective Transient Thermal Impedance  
1
D=0.5  
0.2  
0.1  
PDM  
0.1  
t
0.05  
T
0.02  
0.01  
Single Pulse  
Duty factor=t/T  
Peak TJ=PDM×RthJA+TC  
0.01  
0.00001  
0.0001  
0.001  
Pulse Width,t (s)  
0.01  
0.1  
1
Maximum Safe Operating Area  
1000  
100  
10  
1
100μs  
1ms  
10ms  
TC=25℃  
Single Pulse  
100ms  
DC  
0.1  
1
10  
100  
Drain-to-Source Voltage,VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R502-183.B  
www.unisonic.com.tw  
UT60T03  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-183.B  
www.unisonic.com.tw  

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