UT60T03L-TQ2-R [UTC]
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR;
| 型号： | UT60T03L-TQ2-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR |
| 文件： | 总7页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT60T03
Power MOSFET
30V, 45A N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UT60T03 can provide excellent RDS(ON) and low gate
charge by using UTC’s advanced trench technology.
FEATURES
* Very simple drive requirement
* Very low gate charge
* Fast switching
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
UT60T03L-TF3-T
UT60T03L-TF3-R
UT60T03L-TN3-R
UT60T03L-TQ2-R
UT60T03L-TQ2-T
-
Halogen Free
1
2
D
D
D
D
D
S
3
S
S
S
S
S
S
4
-
5
-
6
-
7
-
8
-
UT60T03G-TF3-T
UT60T03G-TF3-R
UT60T03G-TN3-R
UT60T03G-TQ2-R
UT60T03G-TQ2-T
TO-220F
TO-220F
TO-252
TO-263
TO-263
G
G
G
G
G
S
Tube
-
-
-
-
-
Tape Reel
Tape Reel
Tape Reel
Tube
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UT60T03G-K08-5060-R DFN-8(5×6)
G
D
D
D
D
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-183.D
UT60T03
Power MOSFET
MARKING
TO-220F / TO-252 / TO-262
DFN-8(5×6)
PIN CONFIGURATION
Source
1
Drain
Gate
Source
Source
Source
8
Drain
Drain
Drain
Drain
4
3
2
1
5
6
7
8
Source
Source
Gate
2
3
4
7
6
5
Drain
Drain
Drain
Bottom
View
Top View
DFN-8(5×6)
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UT60T03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
V
A
A
Continuous Drain Current
45
Pulsed Drain Current (Note 2)
IDM
120
TO-220F
TO-252
56
44
Power Dissipation (TC=25°C)
PD
W
TO-263
54
DFN-8(5×6)
21
Junction Temperature
Strong Temperature
TJ
+150
-55 ~ +175
°C
°C
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2 .Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
110
62
UNIT
°C/W
TO-220F
TO-252
Junction to Ambient
Junction to Case
θJA
TO-263
DFN-8(5×6)
TO-220F
TO-252
46
2.66
3.4
θJC
°C/W
TO-263
1.24
6
DFN-8(5×6)
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UT60T03
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
BVDSS
IDSS
VGS=0 V, ID=250µA
VDS=30V, VGS=0V
VGS=±20 V
30
V
1
µA
IGSS
±100 nA
V/°C
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1mA
0.026
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=15A
1
3
V
12
25
Static Drain-Source On-Resistance(Note 1)
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1135
200
VDS=25V, VGS=0V,
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
135
QG
QGS
QGD
tD(ON)
tR
11.6
3.9
7
VDS=20V, VGS=4.5V,
ID=20A (Note 1)
Gate Source Charge
Gate Drain Charge
nC
ns
Turn-ON Delay Time
Turn-ON Rise Time
8.8
57.5
18.5
6.4
VGS=10V, VDS=15V,
RD=0.75ꢀ, ID=20A,
RG=3.3ꢀ (Note 1)
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage (Note 1)
Reverse Recovery Time
VSD
tRR
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/μs
1.3
V
23.3
16
ns
nC
Reverse Recovery Charge
QRR
Note: 1.Pulse width ≤ 300us , duty cycle ≤ 2%.
2. Essentially independent of operating temperature
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UT60T03
Power MOSFET
TYPICAL CHARACTERISTICS
Typical Output Characteristics
Typical Output Characteristics
125
100
75
50
25
0
90
60
30
0
10V
10V
TC=25℃
TC=150℃
8.0V
8.0V
6.0V
6.0V
5.0V
5.0V
VG=4.0V
1
2
3
4
0
1
2
3
4
5
0
Drain to Source Voltage,VDS (V)
Drain to Source Voltage,VDS (V)
Normalized On-Resistance vs.
Junction Temperature
On-Resistance vs. Gate Voltage
80
60
40
20
0
2
ID=20A
TC=25℃
ID=20A
VG=10V
1.6
1.2
0.8
0.4
3
5
9
11
-50
25
100
175
7
Gate-to-Source Voltage,VGS (V)
Junction Temperature,TJ (℃)
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UT60T03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Effective Transient Thermal Impedance
1
D=0.5
0.2
0.1
PDM
0.1
t
0.05
T
0.02
0.01
Single Pulse
Duty factor=t/T
Peak TJ=PDM×RthJA+TC
0.01
0.00001
0.0001
0.001
Pulse Width,t (s)
0.01
0.1
1
Maximum Safe Operating Area
1000
100
10
1
100μs
1ms
10ms
TC=25℃
Single Pulse
100ms
DC
0.1
1
10
100
Drain-to-Source Voltage,VDS (V)
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UT60T03
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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