UT6354G-H-AA3-R [UTC]
Power Field-Effect Transistor,;
| 型号： | UT6354G-H-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT6354-H
Power MOSFET
-4A, -60V P-CHANNEL
SILICON MOSFET
1
DESCRIPTION
SOT-223
The UTC UT6354-H is a P-Channel Silicon MOSFET, it uses
UTC’s advanced technology to provide the customers with a
minimum on state resistance and low gate charge, etc.
The UTC UT6354-H is suitable for general-purpose switching
device applications.
4
5
6
3
2
1
FEATURES
SOT-26
* RDS(ON) ≤ 100mΩ @ VGS=-10V, ID=-2.0A
* Low gate charge
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
G
D
2
D
D
3
S
G
4
-
5
-
6
-
UT6354L-AA3-R
UT6354G-AA3-R
UT6354G-AG6-R
SOT-223
SOT-26
Tape Reel
Tape Reel
UT6354L-AG6-R
S
D
D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
SOT-223
SOT-26
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QW-R210-011.B
UT6354-H
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
-60
±20
-4
V
V
A
VGSS
ID
PW≤10μs
Duty Cycle≤1%
Drain Current (Pulse)
IDP
-16
A
Allowable Power Dissipation
(When Mounted on Ceramic Substrate
(1500mm2×0.8mm))
SOT-223
SOT-26
2.3
1.6
W
W
PD
Junction Temperature
TJ
+150
°C
°C
Storage Temperature Range
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS
Cutoff Voltage
BVDSS
IDSS
ID=-1mA, VGS=0V
-60
V
VDS=-60V, VGS=0V
VGS=±16V,VDS=0V
-1
µA
IGSS
±10 µA
VGS(OFF)
RDS(ON)
VDS=-10V, ID=-1mA
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1A
VGS=-4V, ID=-1A
-1.2
-2.6
V
77
96
100 mΩ
135 mΩ
Static Drain-Source On-State Resistance
103 145 mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
950
60
pF
pF
pF
V
DS=-20V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
40
QG
QGS
QGD
tD(ON)
tR
18
3
nC
nC
nC
ns
ns
ns
ns
VDS=-48V, VGS=-10V, ID=-4A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
IG=-1mA
2
15
17
93
50
VDS=-30V, VGS=-10V, ID=-4A
RG=25Ω
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage VSD IS=-4A,VGS=0V
-0.84 -1.2
V
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UT6354-H
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDD=-30V
VIN
0V
-10V
ID=-2A
RL=15Ω
VIN
VOUT
D
PW=10µS
D.C.≤1%
G
P.G
50Ω
S
Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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UT6354-H
Power MOSFET
TYPICAL CHARACTERISTICS
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UT6354-H
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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UT6354-H
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
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