UT6401G-AE3-R [UTC]

P-CHANNEL POWER MOSFET;
UT6401G-AE3-R
型号: UT6401G-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

P-CHANNEL POWER MOSFET

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UT6401  
Power MOSFET  
5A, 30V P-CHANNEL  
ENHANCEMENT MODE  
3
1
2
DESCRIPTION  
SOT-23  
The UTC UT6401 is P-channel enhancement mode Power  
(SC-59)  
MOSFET, designed with high density cell, with fast switching  
speed, low on-resistance, excellent thermal and electrical  
capabilities, operation with low gate charge.  
4
5
6
This device is suitable for use as a load switch or in PWM  
applications.  
3
2
1
SYMBOL  
SOT-26  
ORDERING INFORMATION  
Pin Assignment  
Ordering Number  
Package  
Packing  
1
S
D
2
G
D
3
D
G
4
-
5
-
6
-
UT6401G-AE3-R  
UT6401G-AG6-R  
SOT-23  
SOT-26  
Tape Reel  
Tape Reel  
S
D
D
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
MARKING  
www.unisonic.com.tw  
Copyright © 2015 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R502-151.D  
UT6401  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
-30  
±12  
Continuous Drain Current (Note 3)  
Pulsed Drain Current (Note 2)  
-5  
A
IDM  
-20  
SOT-23  
SOT-26  
1.38  
2
Power Dissipation  
PD  
W
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
°C  
°C  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL DATA  
PARAMETER  
Junction to Ambient (Note 3)  
SYMBOL  
MIN  
TYP  
MAX  
90  
UNIT  
°C/W  
SOT-23  
SOT-26  
θJA  
110  
ELECTRICAL CHARACTERISTICS (TJ=25, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNITS  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
Gate Threshold Voltage  
BVDSS  
IDSS  
VGS=0V, ID=-250uA  
VDS=-24V, VGS=0V  
VDS=0V, VGS=±12V  
-30  
V
-1  
uA  
IGSS  
±100 nA  
VGS(TH)  
ID(ON)  
VDS=VGS, ID=-250uA  
VDS=-5V, VGS=-4.5V  
VGS=-10V, ID=-5A  
VGS=-4.5V, ID=-4A  
VGS=-2.5V, ID=-1A  
-0.7  
-25  
-1  
-1.3  
V
On State Drain Current  
A
42  
53  
81  
49  
64  
mΩ  
mΩ  
mΩ  
Static Drain-Source On-Resistance (Note 2)  
RDS(ON)  
119  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
CISS  
COSS  
CRSS  
943  
108  
73  
pF  
pF  
pF  
VGS=0V,VDS=-15V,f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-ON Delay Time (Note 2)  
Turn-ON Rise Time  
tD(ON)  
tR  
tD(OFF)  
tF  
6
ns  
ns  
VDS=-15V, VGS=-10V,  
RG=6, RL=3Ω  
3
Turn-OFF Delay Time  
40  
11  
9.5  
2.1  
2.9  
ns  
Turn-OFF Fall Time  
ns  
Total Gate Charge (Note 2)  
Gate-Source Charge  
QG  
nC  
nC  
nC  
VDS=-15V, VGS=-4.5V,  
QGS  
QGD  
ID=-5A  
Gate-Drain Charge  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage(Note2)  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
IS=-1A, VGS=0V  
-0.75  
-1  
-5  
V
A
A
IS  
MAXIMUN Body-Diode Pulsed Current  
Notes: 1. Pulse width limited by TJ(MAX)  
2. Pulse width 300us, duty cycle 0.5%.  
ISM  
-20  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-151.D  
www.unisonic.com.tw  
UT6401  
Power MOSFET  
TYPICAL CHARACTERISTICS  
On-Resistance vs. Gate-Source Voltage  
Body-Diode Characteristics  
1.0E+01  
190  
170  
150  
130  
110  
90  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
ID=-2A  
125℃  
125℃  
25℃  
25℃  
70  
50  
1.0E-05  
1.0E-06  
30  
1
0
0
2
4
6
8
10  
1.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.2  
Gate-Source Voltage, -VGS (V)  
Source-Drain Voltage, -VSD (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R502-151.D  
www.unisonic.com.tw  
UT6401  
Power MOSFET  
TYPICAL CHARACTERISTICS(Cont.)  
Single Pulse Power Rating Junction-to-  
Ambient  
Gate-Charge Characteristics  
5
4
40  
30  
VDS=-15V  
ID=-5A  
TJ(Max)=150℃  
TA=25℃  
3
20  
10  
2
1
0
0
0.001  
0.01  
0
0.1  
1
10  
100 1000  
2
4
6
8
10  
12  
Gate Charge, -QG (nC)  
Pulse Width (s)  
UNISONIC TECHNOLECO., TD  
4 of 5  
QW-R502-151.D  
www.unisonic.com.tw  
UT6401  
Power MOSFET  
TYPICAL CHARACTERISTICS  
Drain-Source On-State Resistance  
Characteristics  
Drain Current vs. Source to Drain Voltage  
-0.8  
-0.6  
-12  
-10  
-8  
VGS=-4.5V  
ID=-4A  
VGS=-10V  
ID=-5A  
-0.4  
-0.2  
-6  
-4  
-2  
0
VGS=-2.5V  
ID=-1A  
0
-0.1  
Drain to Source Voltage, VDS (V)  
0
-0.4  
-0.2  
-0.3  
-0.2  
-0.4  
-0.6  
0
-0.8  
-1  
Source to Drain Voltage,VSD (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-151.D  
www.unisonic.com.tw  

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