UT70P03 [UTC]
75A, 30V P-CHANNEL POWER MOSFET; 75A ， 30V P沟道功率MOSFET
| 型号： | UT70P03 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 75A, 30V P-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT70P03
Power MOSFET
75A, 30V P-CHANNEL
POWER MOSFET
1
TO-220
DESCRIPTION
The UT70P03 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
1
TO-220F
FEATURES
* RDS(ON) = 8mΩ @ VGS = -10 V
* Low Capacitance
* Low Gate Charge
1
TO-251
TO-252
* Fast Switching Capability
* Avalanche Energy Specified
SYMBOL
2.Drain
1
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
3
S
S
S
S
UT70P03L-TA3-T
UT70P03L-TF3-T
UT70P03L-TM3-T
UT70P03L-TN3-R
UT70P03G-TA3-T
UT70P03G-TF3-T
UT70P03G-TM3-T
UT70P03G-TN3-R
TO-220
TO-220F
TO-251
TO-252
G
G
G
G
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-210.F
UT70P03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
-30
V
V
A
A
±20
Continuous Drain Current , VGS=4.5V
Pulsed Drain Current(Note 2)
TC=25°C
-75
IDM
-350
147
TO-220
Power Dissipation (TC=25°C)
PD
W
TO-220F
37
TO-251/ TO-252
107
Junction Temperature
Strong Temperature
TJ
+175
°C
TSTG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
110
UNIT
°C/W
TO-220/TO-220F
TO-251/ TO-252
TO-220
Junction to Ambient
Junction to Case
θJA
0.85
3.4
θJC
°C/W
TO-220F
TO-251/ TO-252
1.4
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ΔBVDSS
ΔTJ
VGS =0 V, ID =-250 µA
-30
Reference to 25°C, ID=-1mA
-0.018
V/°C
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
(Note 2)
IDSS
IGSS
VDS = -30 V, VGS =0 V, TJ =25°C
VGS = ±20 V
-1
µA
nA
±100
VGS(TH)
RDS(ON)
VDS =VGS, ID =-250 µA
VGS =-10 V, ID =-45 A
VGS =-4.5 V, ID =-30 A
-1
-3
8
V
mΩ
mΩ
10
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
2700 4200
550
pF
pF
pF
VDS =-25 V, VGS =0 V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge(Note 2)
Gate Source Charge
380
QG
QGS
QGD
tD(ON)
tR
33
7.5
24
52
nC
nC
nC
ns
ns
ns
ns
VDS =-24 V, VGS =-4.5 V,
ID =-30 A
Gate Drain ("Miller") Charge
Turn-ON Delay Time(Note 2)
Turn-ON Rise Time
11.2
77
VGS=-10V,VDS=-15V, RD=0.5 ꢀ,
ID =-30 A , RG =3.3 ꢀ
Turn-OFF Delay Time
tD(OFF)
tF
35
Turn-OFF Fall-Time
67
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
tRR
IS=-45 A,VGS=0V
IS=-30 A, VGS=0 V,
dI/dt=100 A/μs
-1.3
V
28
10
ns
nC
QRR
Notes: 1.Pulse width ≤ 300μs, duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-210.F
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UT70P03
Power MOSFET
TYPICAL CHARACTERISTICS
Normalized On-Resistance vs.
Junction Temperature
On-Resistance vs. Gate Voltage
ID=-20A
13
11
9
2.0
1.5
ID=-20A
VG=-10V
TC=25°С
7
1.0
0.5
5
3
2
4
8
10
12
-50
25
100
175
6
Gate-to-Source Voltage,-VGS (V)
Junction Temperature,TJ (°С)
UNISONIC TECHNOLOGES O., LTD
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QW-R502-210.F
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UT70P03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONC TECHNOLOGIES CO., LTD
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UT70P03
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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