UT7401L-AL3-R [UTC]

1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET; 1.2A , 30V P沟道增强型功率MOSFET
UT7401L-AL3-R
型号: UT7401L-AL3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
1.2A , 30V P沟道增强型功率MOSFET

文件: 总4页 (文件大小:279K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
UT7401  
Power MOSFET  
1.2A, 30V P-CHANNEL  
ENHANCEMENT MODE POWER  
MOSFET  
3
3
1
2
1
2
SOT-23-3  
SOT-323  
(JEDEC TO-236)  
„
DESCRIPTION  
The UTC UT7401 is P-channel enhancement mode power  
3
MOSFET, designed in serried ranks. With fast switching speed, low  
on-resistance, favorable stabilization.  
Used in commercial and industrial surface mount applications  
and suited for low voltage applications such as DC/DC converters.  
1
2
„
SYMBOL  
SOT-23  
(EIAJ SC-59)  
3.Drain  
2.Gate  
1.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
2 3  
Package  
Packing  
Lead Free  
Halogen Free  
1
S
S
S
UT7401L-AE2-R  
UT7401L-AE3-R  
UT7401L-AL3-R  
UT7401G-AE2-R  
UT7401G-AE3-R  
UT7401G-AL3-R  
SOT-23-3  
SOT-23  
G
G
G
D
D
D
Tape Reel  
Tape Reel  
Tape Reel  
SOT-323  
„
MARKING  
74A  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R502-122.E  
UT7401  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (Ta = 25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
-30  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGSS  
±12  
V
TA=25°C  
TA=70°C  
-1.2  
A
Continuous Drain Current (Note 2)  
Pulsed Drain Current (Note 3)  
Power Dissipation (Note 2)  
ID  
-1.0  
A
IDM  
PD  
-10  
A
TA=25°C  
TA=70°C  
350  
mW  
mW  
°С  
°С  
220  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2.  
3.  
Pulse width limited by TJ(MAX)  
Pulse width 300us, duty cycle 2%.  
„
THERMAL DATA  
PARAMETER  
Junction to Ambient (Note 2)  
SYMBOL  
RATINGS  
425  
UNIT  
θJA  
°С/W  
„
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNITS  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS  
BVDSS  
IDSS  
VGS=0V, ID=-250uA  
VDS=-24V, VGS=0V  
VDS=0V, VGS=±12V  
-30  
V
-1  
uA  
nA  
IGSS  
±100  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=-250uA  
VGS=-10V, ID=-1.2A  
VGS=-4.5V, ID=-1.2A  
VGS=-2.5V, ID=-1.0A  
-0.6  
-1  
-1.4  
V
122 150  
147 200  
207 280  
mΩ  
mΩ  
mΩ  
Drain-Source On-State Resistance (Note 1)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
CISS  
COSS  
CRSS  
409  
55  
pF  
pF  
pF  
V
GS=0V, VDS=-15V,  
Output Capacitance  
f=1MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-ON Delay Time (Note 1)  
Turn-ON Rise Time  
42  
tD(ON)  
tR  
tD(OFF)  
tF  
6.2  
3.2  
ns  
ns  
VDS=-15V, VGS=-10V,  
RG=3, RL=15Ω  
Turn-OFF Delay Time  
41.2  
14.5  
5.06  
0.72  
1.58  
ns  
Turn-OFF Fall Time  
ns  
Total Gate Charge (Note 1)  
Gate-Source Charge  
QG  
nC  
nC  
nC  
VDS=-15V, VGS=-4.5V,  
QGS  
QGD  
ID=-1A  
Gate-Drain Charge  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage(Note2)  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS=0V, IS=-1A  
-0.85  
-1  
V
A
IS  
-0.5  
Notes: 1. Pulse width 300us, duty cycle 2%.  
2. Surface mounted on 1 in2 copper pad of FR4 board  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R502-122.E  
www.unisonic.com.tw  
UT7401  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Gate-Charge Characteristics  
VDS=-15V  
Capacitance Characteristics  
5
4
600  
500  
400  
ID=1A  
CISS  
3
300  
200  
100  
0
2
CRSS  
1
COSS  
0
0
0
3
5
5
10  
15  
20  
25  
30  
4
2
1
Gate Charge, -Qg (nC)  
Drain-Source Voltage, -VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R502-122.E  
www.unisonic.com.tw  
UT7401  
Power MOSFET  
„
TYPICAL CHARACTERISTICS(Cont.)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-122.E  
www.unisonic.com.tw  

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