UT7401L-AL3-R [UTC]
1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET; 1.2A , 30V P沟道增强型功率MOSFET型号: | UT7401L-AL3-R |
厂家: | Unisonic Technologies |
描述: | 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总4页 (文件大小:279K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT7401
Power MOSFET
1.2A, 30V P-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
3
3
1
2
1
2
SOT-23-3
SOT-323
(JEDEC TO-236)
DESCRIPTION
The UTC UT7401 is P-channel enhancement mode power
3
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
1
2
SYMBOL
SOT-23
(EIAJ SC-59)
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
2 3
Package
Packing
Lead Free
Halogen Free
1
S
S
S
UT7401L-AE2-R
UT7401L-AE3-R
UT7401L-AL3-R
UT7401G-AE2-R
UT7401G-AE3-R
UT7401G-AL3-R
SOT-23-3
SOT-23
G
G
G
D
D
D
Tape Reel
Tape Reel
Tape Reel
SOT-323
MARKING
74A
L: Lead Free
G: Halogen Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
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UT7401
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
-30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±12
V
TA=25°C
TA=70°C
-1.2
A
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 3)
Power Dissipation (Note 2)
ID
-1.0
A
IDM
PD
-10
A
TA=25°C
TA=70°C
350
mW
mW
°С
°С
220
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
3.
Pulse width limited by TJ(MAX)
Pulse width ≤300us, duty cycle ≤2%.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 2)
SYMBOL
RATINGS
425
UNIT
θJA
°С/W
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
-30
V
-1
uA
nA
IGSS
±100
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-1.2A
VGS=-4.5V, ID=-1.2A
VGS=-2.5V, ID=-1.0A
-0.6
-1
-1.4
V
122 150
147 200
207 280
mΩ
mΩ
mΩ
Drain-Source On-State Resistance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
409
55
pF
pF
pF
V
GS=0V, VDS=-15V,
Output Capacitance
f=1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 1)
Turn-ON Rise Time
42
tD(ON)
tR
tD(OFF)
tF
6.2
3.2
ns
ns
VDS=-15V, VGS=-10V,
RG=3Ω, RL=15Ω
Turn-OFF Delay Time
41.2
14.5
5.06
0.72
1.58
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note 1)
Gate-Source Charge
QG
nC
nC
nC
VDS=-15V, VGS=-4.5V,
QGS
QGD
ID=-1A
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS=-1A
-0.85
-1
V
A
IS
-0.5
Notes: 1. Pulse width ≤300us, duty cycle ≤2%.
2. Surface mounted on 1 in2 copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
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UT7401
Power MOSFET
TYPICAL CHARACTERISTICS
Gate-Charge Characteristics
VDS=-15V
Capacitance Characteristics
5
4
600
500
400
ID=1A
CISS
3
300
200
100
0
2
CRSS
1
COSS
0
0
0
3
5
5
10
15
20
25
30
4
2
1
Gate Charge, -Qg (nC)
Drain-Source Voltage, -VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
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UT7401
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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