UT9435HZ [UTC]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
| 型号： | UT9435HZ |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT9435HZ
Preliminary
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC UT9435HZ is
a P-channel enhancement power
MOSFET. It has low gate charge, fast switching speed and perfect
RDS(ON)
.
This device is generally applied in power management
applications.
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
S
S
2
S
S
3
S
S
4
5
D
D
6
D
D
7
D
D
8
D
D
UT9435HZL-S08-R
UT9435HZG-S08-R
UT9435HZG-S08-T
SOP-8
SOP-8
G
G
Tape Reel
Tube
UT9435HZL-S08-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
UT3435HZL-S08-R
(1) R: Tape Reel, T: Tube
(2) S08: SOP-8
(1) Packing Type
(2) Package Type
(3) Lead Free
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-740.a
UT9435HZ
Preliminary
Power MOSFET
PIN CONFIGURATION
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R502-740.a
www.unisonic.com.tw
UT9435HZ
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-30
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1, 2)
Power Dissipation
±20
V
±5.3
A
IDM
±20
A
PD
2.5
W
°C
°C
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
50
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=-250µA
VDS=-30V,VGS=0V
VDS=0V ,VGS=±20V
-30
V
-1
µA
µA
IGSS
±5
Gate Threshold Voltage
VGS(TH)
RDS(ON)
ID(ON)
VDS=VGS, ID=-250µA
-1
-3
50
90
V
mΩ
mΩ
V
VGS=-10V,ID=-5.3A
44
74
Drain-Source On-State Resistance (Note 2)
VGS=-4.5V, ID=-4.2A
VDS=-5V, VGS=-10V
On State Drain Current
DYNAMIC PARAMETERS
Input Capacitance
-20
CISS
COSS
CRSS
1040
420
pF
pF
pF
VDS=-15V,VGS=0V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Gate-Source Charge
150
QG
QGS
QGD
tD(ON)
tR
22.5
2
29
nC
nC
nC
ns
ns
ns
ns
VDS=-15V,VGS=-10V,
ID=-4.6A
Gate-Drain Charge
6
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
19
9
26
13
VDD=-15V, ID=-1A,
VGEN=-10V, RG=6Ω,
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
74
36
105
50
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2) VSD VGS=0V, IS =-5.3A
Notes: 1. Pulse width limited by TJ(MAX)
-0.84 -1.3
V
.
2. Pulse width ≤300μs, duty cycle ≤2%.
3. Surface Mounted on 1in2 copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R502-740.a
www.unisonic.com.tw
UT9435HZ
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R502-740.a
www.unisonic.com.tw
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