UTC2SC945 [UTC]
NPN EPITAXIAL SILICON TRANSISTOR(AUDIO FREQUENCY AMPLIFIER); NPN外延硅晶体管（音频放大器）
| 型号： | UTC2SC945 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR(AUDIO FREQUENCY AMPLIFIER) |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SC945
NPNEPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
1
FEATURES
*Collector-Emitter voltage:
BVCBO=50V
TO-92
*Collector current up to 150mA
*High hFE linearity
*Complimentary to 2SA733
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
60
50
5
250
150
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C)
Collector Current
V
mW
mA
mA
°C
Ic
Base Current
Junction Temperature
Storage Temperature
IB
Tj
TSTG
50
125
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
SYMBOL
BVCBO
BVCEO
ICBO
TEST CONDITIONS
Ic=100µA, IE=0
IC=10mA,IB=0
MIN TYP MAX UNIT
60
50
V
V
VCB=40V,IE=0
VEB=3V,Ic=0
100
100
700
nA
nA
Emitter Cut-Off Current
IEBO
DC Current Gain(note)
hFE
VCE=6V,Ic=1mA
70
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
fT
Cob
NF
Ic=100mA,IB=10mA
VCE=10V,Ic=50mA
VCB=10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=6V
RG=10kΩ,f=100Hz
0.1
190
2.0
4.0
0.3
V
MHz
pF
100
3.0
6.0
Noise Figure
dB
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R201-005,A
UTC2SC945
NPNEPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
O
G
Y
L
RANGE
70-140
200-400
120-240
350-700
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
100
80
3
2
10
10
VCE=6V
1
V
CE=6V
10
I
B
=300
=250
µ
µ
A
A
2
10
60
40
IB
I
B
=200
=150
µA
1
0
10
IB
µ
A
10
20
0
I
B
=100
µA
I
B
=50
µA
0
-1
10
10
0
4
8
12
16
20
-1
10
0
1
2
3
10
0
0.2
0.4
0.6
0.8
1.0
10
10
10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
10
2
10
10
Ic=10*I
B
VCE=6V
f=1MHz
3
2
10
V
BE(sat)
I
E=0
10
1
10
2
1
10
0
10
10
V
CE(sat)
-1
10
1
0
10
10
3
0
1
2
3
10
-1
10
0
1
2
10
-1
10
0
1
2
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R201-005,A
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