UTC654-AG6-R [UTC]

Transistor;
UTC654-AG6-R
型号: UTC654-AG6-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
UTC654  
Power MOSFET  
P-CHANNEL  
ENHANCEMENT MODE  
„
DESCRIPTION  
As P-Channel Logic Level MOSFET, UTC654 has been  
optimized for battery power management applications. And  
it’s produced using UTC’s advanced Power Trench process.  
„
SYMBOL  
*Pb-free plating product number: UTC654L  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
SOT-26  
Normal  
Lead Free Plating  
UTC654L-AG6-R  
1
2
3
4
5
6
UTC654-AG6-R  
D
D
G
S
D
D
Tape Reel  
„
MARKING  
C64  
Lead Plating  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-153.A  
UTC654  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TA = 25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
-30  
±20  
Continuous Drain Current (Note 3)  
Pulsed Drain Current (Note 2)  
Power Dissipation  
-3.6  
A
IDM  
-10  
PD  
1.6  
W
°C  
°C  
Junction Temperature  
TJ  
+150  
-55 ~ +150  
Storage Temperature  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
78  
MAX  
UNIT  
°C/W  
°C/W  
Junction-to-Ambient  
Junction-to-Case  
θJC  
30  
„
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
BVDSS  
IDSS  
VGS =0V, ID =-250 µA  
VDS =-24V, VGS =0 V  
VDS = 0V, VGS =±20V  
-30  
V
-1  
µA  
IGSS  
±100 nA  
mV/℃  
Breakdown Voltage Temperature Coefficient BVDSS/TJ Referenced to 25°C,ID=-250µA  
-22  
ON CHARACTERISTICS  
Gate-Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS =VGS, ID =-250 µA  
VGS =-10 V, ID =-3.6A  
VGS =-4.5 V, ID =-2.7A  
-1 -1.9  
63  
-3  
V
75  
Static Drain-Source On-Resistance (Note2)  
mΩ  
100 125  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
CISS  
COSS  
CRSS  
298  
83  
VDS=-15V, VGS =0V, f=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-ON Delay Time (Note2)  
Turn-ON Rise Time  
39  
tD(ON)  
tR  
tD(OFF)  
tF  
6
13  
11  
6
12  
23  
20  
12  
9
VDD =-15V, ID=-1A, VGS =-10V,  
ns  
RGEN =6 ꢀ  
Turn-OFF Delay Time  
Turn-OFF Fall-Time  
Total Gate Charge (Note2)  
Gate-Source Charge  
QG  
6.2  
1
VDS =-15V,VGS=-10V,ID=-3.6 A  
nC  
QGS  
QGD  
Gate-Drain Charge  
1.2  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain Source Diode  
Forward Current  
VSD  
VGS=0V,IS=-1.3 A (Note 2)  
-0.8 -1.2  
-1.3  
V
A
IS  
Notes: 1. Pulse width limited by TJ(MAX)  
2. Pulse width 300us, duty cycle 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-153.A  
www.unisonic.com.tw  
UTC654  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
On-Resistance Variation with Drain  
Current and Gate Voltage  
On-Region Characteristics  
-5.0V  
2
1.8  
1.6  
1.4  
1.2  
1
15  
12  
9
VGS=-3.5V  
-4.0V  
VGS=-10V  
-6.0V  
-4.5V  
-4.5V  
-4.0V  
-5.0V  
-6.0V  
6
3
0
-3.5V  
0.8  
0.6  
0.4  
-7.0V  
-10V  
-3.0V  
6
9
12  
15  
0
3
0
1
2
3
4
5
Drain to Source Voltage,-VDS (V)  
Drain Current,-ID (A)  
Bodt Diode Forward Voltage Variation  
with Source Current and Temperature  
Transfer Characteristics  
10  
10  
VGS=0V  
TA=-55℃  
VDS=-5.0V  
25℃  
125℃  
8
1
0.1  
TA=125℃  
25℃  
6
4
2
0
-55℃  
0.01  
0.001  
0.0001  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1
2
3
4
5
Body Diode Forward Voltage,-VSD (V)  
Gate to Source Voltage,-VGS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R502-153.A  
www.unisonic.com.tw  
UTC654  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Maximum Safe Operating Area  
Single Pulse Maximum Power Dissipation  
Single Pulse  
100  
10  
10  
8
R
θJA=156/W  
TA=25℃  
RDS(ON) Limit  
10μs  
100μs  
1ms  
10ms  
6
1
100ms  
4
2
0
1s  
VGS=-10V  
Single Pulse  
0.1  
DC  
RθJA=156/W  
TA=25℃  
0.01  
0.1  
1
10  
100  
0.01  
1
10  
100  
0.1  
Drain-Source Voltage,-VDS (V)  
Time,t1 (sec)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R502-153.A  
www.unisonic.com.tw  
UTC654  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-153.A  
www.unisonic.com.tw  

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