UTD405 [UTC]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
| 型号： | UTD405 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTD405
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTD405 can provide excellent RDS(ON), low gate
charge and low gate resistance by using advanced trench
technology. This device is well suited for high current load
applications with the excellent thermal resistance.
FEATURES
* RDS(ON) = 32mΩ @VGS = -10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
*Pb-free plating product number: UTD405L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
3
S
S
UTD405-TN3-R
UTD405-TN3-T
UTD405L-TN3-R
UTD405L-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
www.unisonic.com.tw
1 of 5
Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-199.A
UTD405
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
-30
±20
V
Continuous Drain Current
Pulsed Drain Current
-18
A
IDM
-40
A
Avalanche Current
IAR
-18
A
Repetitive Avalanche Energy(L=0.1mH)
Power Dissipation
EAR
PD
40
mJ
W
℃
℃
2.5
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
40
MAX
50
UNIT
℃/W
Junction-to-Ambient
θJA
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
BVDSS
IDSS
VGS =0 V, ID =-250 µA
VDS =-24 V, VGS =0 V
VDS =0 V, VGS = ±20V
-30
-0.003
-1
µA
nA
IGSS
±100
VGS(TH)
ID(ON)
VDS =VGS, ID =-250 µA
VGS=-10V, VDS=-5V
VGS =-10 V, ID =-18A
-1.2
-40
-2
-2.4
V
On state drain current
A
24.5
41
32
60
mΩ
mΩ
Static Drain-Source On-Resistance
RDS(ON)
V
GS =-4.5 V, ID =-10A
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
920
190
122
1100
pF
pF
pF
V
DS =-15 V, VGS =0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
18.7
2.54
5.4
9
23
nC
nC
nC
ns
ns
ns
ns
VDS =-15V, VGS =-10V, ID =-18 A
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
13
35
30
18
VGS=-10V,VDS=-15V, RL=0.82Ω,
R
25
GEN=3Ω
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
20
12
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IS=-1A,VGS=0V
-0.76
-1
-18
26
16
V
A
IS
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery
Charge
tRR
QRR
IF=-18A, dI/dt=100A/μs
IF=-18A, dI/dt=100A/μs
21.4
13
ns
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle 0.5% max.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-199.A
www.unisonic.com.tw
UTD405
Power MOSFET
TYPICAL CHARACTERISTICS
Body-Diode Characteristics
On-Resistance vs.Gate-to-Source Voltage
ID=-18A
100
90
1.0E+0.1
1.0E+0.0
1.0E-0.1
80
70
125℃
60
50
40
1.0E-0.2
1.0E-0.3
125℃
30
20
25℃
1.0E-0.4
1.0E-0.5
1.0E-0.6
25℃
10
0
5
6
7
8
9
10
3
4
0.0
0.2
0.4
0.6
-VSD (Volts)
0.8
1.0
-VGS (Volts)
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R502-199.A
www.unisonic.com.tw
UTD405
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Maximum Forward Biased Safe Operating Area
Single Pulse Power Rating Junction-to-Ambient
40
30
1000.0
TJ(MAX)=150℃
TA=25℃
TJ(MAX)=150℃
TA=25℃
10μs
RDS(ON)
Limited
1ms
100μs
10.0
1.0
10ms
20
0.1s
1s
10
0
10s
DC
0.1
0.1
0.001
0.01
0.1
1
10
100
1000
1
10
100
-VDS (Volts)
Pulse Width (s)
UNISONIC TECHNOGIES CO., LTD
4 of 5
QW-R502-199.A
www.unisonic.com.tw
UTD405
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R502-199.A
www.unisonic.com.tw
相关型号：
UTD410-TN3-R
Power Field-Effect Transistor, 8A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
UTC
UTD410-TN3-T
Power Field-Effect Transistor, 8A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明