UTM6006G-S08-R [UTC]
N-CHANNEL FAST SWITCHING MOSFET;
| 型号： | UTM6006G-S08-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL FAST SWITCHING MOSFET 开关 |
| 文件： | 总7页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTM6006
Power MOSFET
6.3A, 60V N-CHANNEL FAST
SWITCHING MOSFET
DESCRIPTION
The UTC UTM6006 is an N-Channel MOSFET, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, high switching speed and low gate charge.
SOP-8
The UTC UTM6006 is suitable for application in networking
DC-DC power system and LCD/LED back light, etc.
1
FEATURES
* RDS(ON)< 18 mΩ @ VGS=10V, ID=6A
DS(ON) < 20 mΩ @ VGS=4.5V, ID=4A
* Low gate charge
R
DFN-8(5x6)
* Excellent CdV/dt effect decline
* High switching speed
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
1
S
S
2
S
S
3
S
S
4
G
G
5
D
D
6
D
D
7
8
D
D
UTM6006G-S08-R
SOP-8
D
D
Tape Reel
Tape Reel
UTM6006G-K08-5060-R
DFN-8(5×6)
D: Drain S: Source
Note: Pin Assignment: G: Gate
MARKING
SOP-8
DFN-8(5×6)
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UTM6006
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
V
Continuous
GS @ 10V (Note 1)
Pulsed (Note 2)
TA=25°C
TA=70°C
6.3
A
ID
V
Drain Current
5.0
A
IDM
IAS
32
A
Avalanche Current
28
A
Single Pulse Avalanche Energy (Note 3)
EAS
67
mJ
SOP-8
1.5
Power Dissipation (TA=25°C) (Note 4)
PD
W
DFN-8(5×6)
1.92
-55~+150
-55~+150
Junction Temperature
TJ
°C
°C
Storage Temperature Range
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (Note 1)
PARAMETER
SOP-8
SYMBOL
RATINGS
UNIT
°C/W
85
65
24
12
Junction to Ambient
Junction to Case
θJA
DFN-8(5×6)
SOP-8
θJC
°C/W
DFN-8(5×6)
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=30A.
4. The power dissipation is limited by 150°C junction temperature.
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UTM6006
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
BVDSS
ID=250µA, VGS=0V
60
V
V/°C
µA
△BVDSS/△TJ Reference to 25°C , ID=1mA
0.057
VDS=48V, VGS=0V, TJ=25°C
IDSS
1
5
Drain-Source Leakage Current
Gate-Source Leakage Current
VDS=48V, VGS=0V, TJ=55°C
µA
Forward
Reverse
VGS=+20V, VDS=0V
IGSS
+100 nA
VGS=-20V, VDS=0V
-100
2.5
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
1.2
V
mV/°
C
VDS=VGS, ID=250µA
VGS(TH) Temperature Coefficient
△VGS(TH)
-5.68
Static Drain-Source On-State Resistance
(Note 2)
VGS=10V, ID=6A
RDS(ON)
14
16
40
18
20
mΩ
mΩ
S
VGS=4.5V, ID=4A
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
gFS
VDS=5V, ID=6A
CISS
COSS
CRSS
1070 1200 pF
V
V
GS=0V, VDS=25V, f=1.0MHz
GS=10V, VDS=48V, ID=1A
Output Capacitance
200 220
190 210
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Total Gate Charge (4.5V)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
QG
QGS
QGD
tD(ON)
tR
290 310
nC
nC
nC
ns
ns
ns
ns
10.7
30
15
45
70
55
VGS=10V, VDD=30V,
100 120
580 620
190 210
RG=3.3Ω, ID=2A
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
GUARANTEED AVALANCHE CHARACTERISTICS
Single Pulse Avalanche Energy (Note 5)
DIODE CHARACTERISTICS
Continuous Source Current (Note 1, 6)
Pulsed Source Current (Note 2, 6)
Diode Forward Voltage (Note 2)
Reverse Recovery Time
EAS
VDD=25V, L=0.1mH, IAS=15A
19
mJ
IS
ISM
VSD
trr
6.3
A
A
VG=VD=0V , Force Current
VGS=0V , IS=6.3A , TJ=25°C
IF=6A, dI/dt=100A/μs, TJ=25°C
32
1
V
15
nS
nC
Reverse Recovery Charge
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
Qrr
10.4
2. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=30A.
4. The power dissipation is limited by 150°C junction temperature.
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power
dissipation.
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UTM6006
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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UTM6006
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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UTM6006
Power MOSFET
TYPICAL CHARACTERISTICS
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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