UTR4502L-AE3-R [UTC]
-1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET; -1.95安培,伏特-30 P沟道功率MOSFET型号: | UTR4502L-AE3-R |
厂家: | Unisonic Technologies |
描述: | -1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET |
文件: | 总4页 (文件大小:218K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTR4502
Power MOSFET
-1.95 Amps, -30 Volts
P-CHANNEL POWER MOSFET
DESCRIPTION
The UTR4502 uses UTC advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON)<155mΩ @VGS=-10V
* RDS(ON)<240mΩ @VGS=-4.5V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
S
S
2
3
D
D
UTR4502L-AE2-R
UTR4502L-AE3-R
UTR4502G-AE2-R
UTR4502G-AE3-R
SOT-23-3
SOT-23
G
G
Tape Reel
Tape Reel
MARKING
45B
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-234.C
UTR4502
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1, 2)
Total Power Dissipation
-1.13
-6.8
A
IDM
A
PD
0.4
W
℃
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
300
UNIT
℃/W
Junction-to-Ambient
θJA
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVDSS
IDSS
VGS=0 V, ID=-250µA
VDS=-30V, VGS=0V
VDS=0V, VGS=±20V
-30
V
-1
µA
nA
IGSS
±100
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250µA
VGS=-10V, ID=-1.95A
VGS=-4.5V, ID=-1.5A
-1.0
-3.0
200
350
V
155
240
Static Drain-Source On-Resistance (Note 2)
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
200
80
pF
pF
pF
V
DS=-15V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 4)
Turn-ON Delay Time
50
tD(ON)
tR
tD(OFF)
tF
5.2
12
19
17.5
6
10
24
96
48
10
ns
ns
Turn-ON Rise Time
VGS=-10V, VDD=-15V,
ID=-1.95A, RGEN=6ꢀ
Turn-OFF Delay Time
Turn-OFF Fall-Time
ns
ns
Total Gate Charge
QG(TOT)
QG(TH)
QGS
nC
nC
nC
nC
Threshold Gate Charge
Gate Source Charge
VDS=-15V, VGS=-10V,
ID =-1.95A
0.3
1
Gate Drain Charge
QGD
1.7
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 3)
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1.25A, VGS=0V
GS=0V, dISD /dt=100A/s
IS=-1.25A
-0.8
23
-1.2
V
V
Reverse Recovery Time
tRR
ns
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R502-234.C
www.unisonic.com.tw
UTR4502
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
-300
-250
-200
-150
-100
-300
-250
-200
-150
-100
-50
0
-50
0
-10
-20
0
-30
-40
0
-500
-1000
-1500
Gate Threshold Voltage, VTH (mV)
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source
On-State Resistance Characteristics
-2.5
-2.0
VGS=-10V
ID=-1.95A
-1.5
-1.0
VGS=-4.5V
ID=-1.5A
-0.5
0
0
-50
-100
-150
-200
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R502-234.C
www.unisonic.com.tw
UTR4502
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R502-234.C
www.unisonic.com.tw
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