UTT6N10G-AA3-R [UTC]
100V, 6A N-CHANNEL POWER MOSFET;
| 型号： | UTT6N10G-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 100V, 6A N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTT6N10
Power MOSFET
100V, 6A N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC UTT6N10 is an N-channel enhancement mode Power
FET, it uses UTC’s advanced technology to provide customers a
minimum on-state resistance, high switching speed and ultra low
gate charge.
1
SOT-223
The UTC UTT6N10 is usually used in DC-DC Conversion.
FEATURES
* RDS(on) =80mΩ @VGS = 10 V,ID=6A
* High Switching Speed
* Low Crss (Typically 3.1pF)
* Low Gate Charge(Typically 4.3nC)
SYMBOL
D (2)
G (1)
S (3)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-223
Packing
Lead Free
Halogen Free
UTT6N10G-AA3-R
1
2
3
UTT6N10L-AA3-R
G
D
S
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
UTT6N10L-AA3-R
(1)Packing Type
(1) R: Tape Reel
(2) AA3: SOT-223
(2)Package Type
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R502-779.C
UTT6N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
100
±20
V
Continuous
Pulsed
6
A
Drain Current
IDM
24
A
Single Pulsed Avalanche Energy (Note 3)
EAS
12
mJ
W
Power Dissipation
TA=25°C (Note 1)
PD
2.2
Junction Temperature
Storage Temperature Range
TJ
150
°C
°C
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient (Note 1)
Junction to Case
55
12
θJC
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
GS=+20V, VDS=0V
100
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
1.0
3.0
V
V
GS=10V, ID=3A
200 mΩ
225 mΩ
Static Drain-Source On-State Resistance
VGS=4.5V, ID=1A
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
234 315
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
VGS=0V, VDS=25V, f=1.0MHz
46
65
5
3.1
QG
QGS
QGD
tD(ON)
tR
VGS=10V, VDD=25V, ID=6A
VDD=50V, ID=6A
4.3
0.7
0.9
7
nC
nC
nC
ns
ns
ns
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
VDD=50V, ID=6A
3.8 10
1.3 10
VDD=50V, ID=6A, VGS=10V,
R
GEN=6Ω
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
10
20
1.5 10
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
ssDrain-Source Diode Forward Voltage
Maximum Body-Diode Continuous Current
Source Current Pulsed
VSD
IS
IS=3.2A, VGS=0V (Note 2)
0.86 1.3
V
A
A
6
ISM
24
Notes: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
3. Starting TJ = 25°C, L =11mH, IAS =6A, VDD = 90V, VGS=10V.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-779.C
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UTT6N10
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
25
50
75
100 125
0
0.4
Gate Threshold Voltage, VTH (V)
0.8 1.2
1.6 2.0 2.4
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
3.6
Drain Current vs. Source to Drain Voltage
3.6
3.0
3.0
VGS=10V, ID=3.2A
2.4
2.4
1.8
1.8
1.2
1.2
0.6
0
0.6
0
0
0.05 0.1 0.15 0.2 0.25 0.3
Drain to Source Voltage, VDS (V)
0.2
0.4
0.6
0.8
1.0
0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-779.C
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