X1049A_12 [UTC]
HIGH GAIN TRANSISTOR; 高增益晶体管
| 型号： | X1049A_12 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH GAIN TRANSISTOR |
| 文件： | 总4页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
X1049A
NPN SILICON TRANSISTOR
HIGH GAIN TRANSISTOR
FEATURES
* VCEV = 80V
* High Gain
* 20 Amps pulse current
1
TO-92
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
E
2
B
B
B
3
C
C
C
X1049AL-T92-B
X1049AL-T92-K
X1049AL-T92-R
X1049AG-T92-B
X1049AG-T92-K
X1049AG-T92-R
TO-92
TO-92
TO-92
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-061.C
X1049A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
80
VCEO
25
V
VEBO
5
V
DC
4
20
A
Collector Current
IC
Pulse
A
Base Current
IB
PD
500
mA
W
℃
℃
℃
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
1
TJ
125
TOPR
TSTG
-20 ~ +85
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
80
25
80
80
5
TYP
120
35
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
VCBO IC=100μA
VCEO IC=10mA
V
VCES IC=100μA
VCEV IC=100μA, VEB=1V
VEBO IE=100μA
120
120
8.75
0.3
V
V
V
ICBO
IEBO
ICES
VCB=50V
10
10
nA
nA
nA
Emitter Cut-Off Current
VEB=4V
0.3
Collector Emitter Cut-Off Current
VCES=50V
0.3
10
IC=0.5A, IB=10mA
IC=1A, IB=10mA
IC=2A, IB=10mA
IC=4A, IB=50mA
30
70
60
130
280
400
980
920
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
mV
125
155
890
820
430
450
450
350
Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=4A, IB=50mA
mV
mV
Base-Emitter Turn-On Voltage (Note)
VBE(ON) IC=4A, VCE=2V
IC=10mA, VCE=2V
250
300
300
200
7
IC=0.5A, VCE=2V
DC Current Gain (Note)
hFE
IC=1A, VCE=2V
1200
60
IC=4A, VCE=2V
IC=20A, VCE=2V
Transition Frequency
Output Capacitance
Turn-On Time
fT
IC=50mA, VCE=10V, f=50MHz
180
45
MHz
pF
COBO VCB=10V, f=1MHz
tON
IC=4A, IB=40mA, VCC=10V
IC=4A, IB=±40mA, VCC=10V
125
380
ns
Turn-Off Time
tOFF
ns
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R201-061.C
www.unisonic.com.tw
X1049A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIECO., LTD
3 of 4
QW-R201-061.C
www.unisonic.com.tw
X1049A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Power Dissipation vs. Ambient Temperature
Transient Thermal Resistance
D=1(D,C)
180
1.0
160
140
120
100
0.75
D=0.5
0.50
80
60
40
D=0.2
0.25
0.00
D=0.1
20
0
D=0.05
Single Pulse
10s
0.1ms 1ms 10ms
1s
100ms
100s
-40
0
40
80 120
200
160
Pulse Width
Ambient Temperature ( ℃ )
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R201-061.C
www.unisonic.com.tw
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