XL1225 [UTC]
The XL1225/ML1225 silicon controlled rectifiers; 该XL1225 / ML1225可控硅整流器型号: | XL1225 |
厂家: | Unisonic Technologies |
描述: | The XL1225/ML1225 silicon controlled rectifiers |
文件: | 总2页 (文件大小:19K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
XL/ML1225
SCR
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts
are intended for low cost high volume applications.
1
TO-92
1:CATHODE 2:GATE 3:ANODE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
PART NO. SYMBOL
TEST
MIN.
MAX. UNITS
CONDITION RATING RATING
Repetitive Peak Off-State Voltage
XL1225
ML1225
VDRM
VDRM
Tj=40 to 125°C
(rgk=1kW)
400
300
0.8
0.5
V
On-State Current
IT(RMS)
IT(AV)
Tc=40°C
A
A
Average On-State Current
Half Cycle=180,
Tc=40°C
Peak Reverse Gate Voltage
Peak Gate Current
VGRM
IGM
IGR=10uA
10us Max.
1
V
0.1
150
-40
-40
A
Gate Dissipation
PG(AV)
Tj
20ms Max.
W
°C
°C
°C
Operating Temperature
Storage Temperature
Soldering Temperature
125
125
250
TSTG
TSLD
1.6mm from case
10s Max.
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Off state leakage current
Off state leakage current
On state voltage
SYMBOL
IDRM
TEST CONDITIONS
@VDRM(RGK=1KW), Tj=125°C
@VDRM(RGK=1KW), Tj=25°C
AT IT=0.4A
MIN
MAX
0.1
1.0
1.4
2.2
0.95
600
200
0.8
5
UNIT
mA
mA
IDRM
VT
V
AT IT=0.8A
On state threshold voltage
On state slops resistance
Gate trigger current
Gate trigger voltage
Holding current
VT(TO)
Rt
Tj=125°C
V
m
Tj=125°C
IGT
VD=7V
mA
V
VGT
IH
VD=7V
RGK=1KW
mA
mA
V/ms
Latching current
IL
RGK=1KW
6
Critical rate of voltage rise
DV/DT
VD=0.67*VDRM(RGK=1KW),
Tj=125°C
Critical rate of current rise
DV/DT
IG=10mA, dIG/dt=0.1A/ms,
Tj=125°C
A/ms
Gate controlled delay time
Commutated turn-off time
TGD
TG
IG=10mA, dIG/dt=0.1A/ms,
Tj=85°C, VD=0.67*VDRM,
VR=35V, IT=IT(AV)
500
200
ms
ms
1
UTC UNISONIC TECHNOLOGIES CO. LTD
XL/ML1225
SCR
UNIT
K/W
K/W
PARAMETER
SYMBOL
Rq JC
TEST CONDITIONS
MIN
MAX
Thermal resistance junc. to case
Thermal resistance junc. to case
Rq JA
CLASSIFICATION OF hFE
RANK
B
C
AA
AB
AC
20-25mA
AD
RANGE
50-100mA
100-200mA
8-15mA
15-20mA
25-50mA
2
UTC UNISONIC TECHNOLOGIES CO. LTD
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