XL1225 [UTC]

The XL1225/ML1225 silicon controlled rectifiers; 该XL1225 / ML1225可控硅整流器
XL1225
型号: XL1225
厂家: Unisonic Technologies    Unisonic Technologies
描述:

The XL1225/ML1225 silicon controlled rectifiers
该XL1225 / ML1225可控硅整流器

可控硅整流器
文件: 总2页 (文件大小:19K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
XL/ML1225  
SCR  
DESCRIPTION  
The XL1225/ML1225 silicon controlled rectifiers are high  
performance planner diffused PNPN devices. These parts  
are intended for low cost high volume applications.  
1
TO-92  
1:CATHODE 2:GATE 3:ANODE  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETERS  
PART NO. SYMBOL  
TEST  
MIN.  
MAX. UNITS  
CONDITION RATING RATING  
Repetitive Peak Off-State Voltage  
XL1225  
ML1225  
VDRM  
VDRM  
Tj=40 to 125°C  
(rgk=1kW)  
400  
300  
0.8  
0.5  
V
On-State Current  
IT(RMS)  
IT(AV)  
Tc=40°C  
A
A
Average On-State Current  
Half Cycle=180,  
Tc=40°C  
Peak Reverse Gate Voltage  
Peak Gate Current  
VGRM  
IGM  
IGR=10uA  
10us Max.  
1
V
0.1  
150  
-40  
-40  
A
Gate Dissipation  
PG(AV)  
Tj  
20ms Max.  
W
°C  
°C  
°C  
Operating Temperature  
Storage Temperature  
Soldering Temperature  
125  
125  
250  
TSTG  
TSLD  
1.6mm from case  
10s Max.  
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)  
PARAMETER  
Off state leakage current  
Off state leakage current  
On state voltage  
SYMBOL  
IDRM  
TEST CONDITIONS  
@VDRM(RGK=1KW), Tj=125°C  
@VDRM(RGK=1KW), Tj=25°C  
AT IT=0.4A  
MIN  
MAX  
0.1  
1.0  
1.4  
2.2  
0.95  
600  
200  
0.8  
5
UNIT  
mA  
mA  
IDRM  
VT  
V
AT IT=0.8A  
On state threshold voltage  
On state slops resistance  
Gate trigger current  
Gate trigger voltage  
Holding current  
VT(TO)  
Rt  
Tj=125°C  
V
m
Tj=125°C  
IGT  
VD=7V  
mA  
V
VGT  
IH  
VD=7V  
RGK=1KW  
mA  
mA  
V/ms  
Latching current  
IL  
RGK=1KW  
6
Critical rate of voltage rise  
DV/DT  
VD=0.67*VDRM(RGK=1KW),  
Tj=125°C  
Critical rate of current rise  
DV/DT  
IG=10mA, dIG/dt=0.1A/ms,  
Tj=125°C  
A/ms  
Gate controlled delay time  
Commutated turn-off time  
TGD  
TG  
IG=10mA, dIG/dt=0.1A/ms,  
Tj=85°C, VD=0.67*VDRM,  
VR=35V, IT=IT(AV)  
500  
200  
ms  
ms  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
XL/ML1225  
SCR  
UNIT  
K/W  
K/W  
PARAMETER  
SYMBOL  
Rq JC  
TEST CONDITIONS  
MIN  
MAX  
Thermal resistance junc. to case  
Thermal resistance junc. to case  
Rq JA  
CLASSIFICATION OF hFE  
RANK  
B
C
AA  
AB  
AC  
20-25mA  
AD  
RANGE  
50-100mA  
100-200mA  
8-15mA  
15-20mA  
25-50mA  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  

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